Conspectus
Nanostructured copper-based materials have emerged
as a new generation
of robust architectures for realizing high-performing and reliable
interconnection in modern electronic packaging. As opposed to traditional
interconnects, nanostructured materials offer better compliance during
the packaging assembly process. Due to the high surface area-to-volume
ratio of nanomaterials, they also enable joint formation by sintering
through thermal compression at much lower temperatures compared to
bulk counterparts. Nanoporous Cu (np-Cu) films have been employed
in electronic packaging as materials that facilitate a chip-to-substrate
interconnection, realized by a Cu-on-Cu bonding after sintering.
In this Account, we discuss the use of self-supported np-Cu films
for low-temperature joint formation. The novelty of this work comes
from the incorporation of tin (Sn) into the np-Cu structure, thus
ensuring lower sintering temperatures with a goal of producing Cu–Sn
intermetallic alloy-based joints between two Cu substrates. The incorporation
of Sn is done using an all-electrochemical bottom-up approach that
involves the conformal coating of fine-structured np-Cu (initially
formed by dealloying of Cu–Zn alloys) with a thin layer of
Sn.
This Account provides insight on existing technologies for
using
nanostructured films as materials for interconnects as well as the
optimization studies for the Sn-coating processes as a new alternative
approach. The applicability of the synthesized Cu–Sn nanomaterials
for low-temperature joint formation is also discussed. To realize
this new approach, the Sn-coating process is administered by a galvanic
pulse plating technique, which is optimized to preserve the porosity
in the structure with a Cu/Sn atomic ratio that allows for the formation
of the Cu6Sn5 intermetallic compound (IMC).
Nanomaterials obtained using this approach are subjected to joint
formation by sintering at temperatures between 300 and 200 °C
under 20 MPa pressure in forming gas atmosphere. Cross-section characterization
of the formed joints postsintering reveals densified bonds with minimal
porosity that consist predominantly of the Cu3Sn IMC. Furthermore,
these joints are less prone to structural inconsistencies compared
to existing joints formed using purely np-Cu. The results presented
in this Account provide a glimpse into a facile and cost-effective
approach for synthesizing nanostructured Cu–Sn films and illustrate
their applicability as new interconnect materials.