Film growth mechanics of photo-chemical vapor deposition

Very low photo-CVD deposition rate process for high quality thin SiO/sub 2/ films

“…The dependence of the deposition rate on distance between lamp and substrates was previously reported in [ 5 ] . These authors reported that the reposition rate increased with distance between the lamp and the substrate, reaching a maximum and starting again to decrease as distance was further increased.…”

“…The use of photo-enhanced Chemical Vapor Deposition (Photo-CVD) technique has been reported before to obtain good quality layers of Si02 [1,2,3,4] and Si3N4 [5]. 0 2 [1,2] or N 2 0 [3] and NO2 [4] are the basic gases that have been used to provide oxygen atoms.…”

“…They can be dissociated using a wavelength of less than 160 nm, 175-195 nm and 106 nm respectively. NH3 has been reported as gases to provide the nitrogen when illuminated with a wavelength on the order of 185 nm [5]. As Si source, several gases as SiH, [1,2,3,4] and disilane [5] have been studied.…”

“…NH3 has been reported as gases to provide the nitrogen when illuminated with a wavelength on the order of 185 nm [5]. As Si source, several gases as SiH, [1,2,3,4] and disilane [5] have been studied. The use of tetra-ethoxy-silane (Si(OC2H5),) has also been reported [6].…”

“…The use of tetra-ethoxy-silane (Si(OC2H5),) has also been reported [6]. Low pressure mercury lamp [2,3,5], deuterium lamp [I], microwave excited argon discharge lamp 141 and a 200 mJ at 50 Hz and 23 ns duration pulse ArF laser [7] and other excimer lasers [8] are some of the light sources reported for Photo-CVD.…”