Film Thickness Dependence of Rectifying Properties of La
 1.85
 Sr
 0.15
 CuO
 4
 /Nb-SrTiO
 3
 Junctions

Chen, Leiming; Li, Guang-Cheng; Zhang, Yan; Yanfeng, Guo

doi:10.1088/0256-307x/27/7/077401

Chinese Phys. Lett.

2010

DOI: 10.1088/0256-307x/27/7/077401

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Film Thickness Dependence of Rectifying Properties of La _1.85 Sr _0.15 CuO ₄ /Nb-SrTiO ₃ Junctions

Leiming Chen

Guang-Cheng Li

Yan Zhang

et al.

Abstract: In this work, p-n junctions are made from directly depositing optimal doped La1.85Sr0.15CuO4 (LSCO) films on n-type Nb-doped SrTiO3 substrates. Film thickness controlled rectifying behaviors are strikingly displayed. The starting points of the diffusion voltage reduction 𝑉 𝑑−𝑜𝑛 change clearly with varying film thickness. 𝑉 𝑑−𝑜𝑛 and 𝑇𝐶 coincide with each other when the film thickness is larger than 300 nm, indicating a close relation between the two parameters. However, when the film is very thin (< 3… Show more

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“…In LSNO, the substitution of Sr 2+ for La 3+ can provide holes in the O 2p band similar to the isostructural cuprates. 9 These represent some of the first studies on device junctions fabricated with this oxide system.…”

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confidence: 94%

Heteroepitaxial La_2−xSr_xNiO₄-Nb-Doped SrTiO₃Junctions: Synthesis and Rectification Characteristics

Podpirka

Ramanathan

2011

J. Electrochem. Soc.

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pn junctions formed with complex oxides may be of interest in emerging fields of electronics and energy conversion owing in part to their rich electronic structure. We report on the successful synthesis of epitaxial La 1.875 Sr 0.125 NiO 4 (LSNO) films on Nbdoped SrTiO 3 (Nb:STO) single crystals and a detailed study of their electrical properties. The junctions measured displayed highly rectifying current-voltage characteristic from 298 to 373 K. Mechanism for rectification is likely due to the formation of a pn junction between heavily doped n-type Nb:STO and semiconducting p-type LSNO. Capacitance-voltage (C-V) measurements as a function of temperature and frequency were used to determine the admittance of the pn junction. We investigate the thickness dependence of capacitance and highlight the role of defects in influencing the electronic properties of complex oxide pn junctions.

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mentioning

confidence: 94%

Heteroepitaxial La_2−xSr_xNiO₄-Nb-Doped SrTiO₃Junctions: Synthesis and Rectification Characteristics

Podpirka

Ramanathan

2011

J. Electrochem. Soc.

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Preparation and characterization of La_1.8Sr_0.2CuO₄/La_1.9Sr_0.1CuO₄ superconducting bilayers

Zhang

Xing

et al. 2013

Powder Diffr.

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The c-oriented La1.8Sr0.2CuO4 and La1.9Sr0.1CuO4 bilayer films were deposited on (001) SrTiO3 single-crystal substrates by using the pulsed laser deposition technique. The effects of deposition parameters on the quality of thin films were investigated. The crystal structures and surface morphologies were characterized by means of XRD and SEM, and the results showed that an as-prepared film deposited with the optimized parameters has high quality. Then La1.8Sr0.2CuO4/La1.9Sr0.1CuO4 bilayers structure was prepared using the optimized parameters for each corresponding layer, and the electrical transport properties were measured. Interesting rectifying properties were observed at both room and low temperatures, and the rectifying ratio at low temperature was found to be much higher than that at room temperature.

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Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS₂ van der Waals Heterojunction Diode

Dastgeer

Khan

Nazir

et al. 2018

ACS Appl. Mater. Interfaces

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Heterostructures comprising two-dimensional (2D) semiconductors fabricated by individual stacking exhibit interesting characteristics owing to their 2D nature and atomically sharp interface. As an emerging 2D material, black phosphorus (BP) nanosheets have drawn much attention because of their small band gap semiconductor characteristics along with high mobility. Stacking structures composed of p-type BP and n-type transition metal dichalcogenides can produce an atomically sharp interface with van der Waals interaction which leads to p-n diode functionality. In this study, for the first time, we fabricated a heterojunction p-n diode composed of BP and WS. The rectification effects are examined for monolayer, bilayer, trilayer, and multilayer WS flakes in our BP/WS van der Waals heterojunction diodes and also verified by density function theory calculations. We report superior functionalities as compared to other van der Waals heterojunction, such as efficient gate-dependent static rectification of 2.6 × 10, temperature dependence, thickness dependence of rectification, and ideality factor of the device. The temperature dependence of Zener breakdown voltage and avalanche breakdown voltage were analyzed in the same device. Additionally, superior optoelectronic characteristics such as photoresponsivity of 500 mA/W and external quantum efficiency of 103% are achieved in the BP/WS van der Waals p-n diode, which is unprecedented for BP/transition metal dichalcogenides heterostructures. The BP/WS van der Waals p-n diodes have a profound potential to fabricate rectifiers, solar cells, and photovoltaic diodes in 2D semiconductor electronics and optoelectronics.

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Film Thickness Dependence of Rectifying Properties of La _1.85 Sr _0.15 CuO ₄ /Nb-SrTiO ₃ Junctions

Cited by 3 publications

References 21 publications

Heteroepitaxial La_2−xSr_xNiO₄-Nb-Doped SrTiO₃Junctions: Synthesis and Rectification Characteristics

Heteroepitaxial La_2−xSr_xNiO₄-Nb-Doped SrTiO₃Junctions: Synthesis and Rectification Characteristics

Preparation and characterization of La_1.8Sr_0.2CuO₄/La_1.9Sr_0.1CuO₄ superconducting bilayers

Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS₂ van der Waals Heterojunction Diode

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Film Thickness Dependence of Rectifying Properties of La 1.85 Sr 0.15 CuO 4 /Nb-SrTiO 3 Junctions

Cited by 3 publications

References 21 publications

Heteroepitaxial La2−xSrxNiO4-Nb-Doped SrTiO3Junctions: Synthesis and Rectification Characteristics

Heteroepitaxial La2−xSrxNiO4-Nb-Doped SrTiO3Junctions: Synthesis and Rectification Characteristics

Preparation and characterization of La1.8Sr0.2CuO4/La1.9Sr0.1CuO4 superconducting bilayers

Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS2 van der Waals Heterojunction Diode

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Product

Resources

About

Film Thickness Dependence of Rectifying Properties of La _1.85 Sr _0.15 CuO ₄ /Nb-SrTiO ₃ Junctions

Heteroepitaxial La_2−xSr_xNiO₄-Nb-Doped SrTiO₃Junctions: Synthesis and Rectification Characteristics

Heteroepitaxial La_2−xSr_xNiO₄-Nb-Doped SrTiO₃Junctions: Synthesis and Rectification Characteristics

Preparation and characterization of La_1.8Sr_0.2CuO₄/La_1.9Sr_0.1CuO₄ superconducting bilayers

Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS₂ van der Waals Heterojunction Diode