“…One way to control and modulate defects, especially vacancy clusters, is the substitution or doping of transition metals in the CeO 2 structure. This can lead to the formation of defects in the forbidden region of the band gap of CeO 2 , causing the promotion of electrons to the 4f states of Ce, which are responsible for determining the properties of this semiconductor. , The introduction of elements with different oxidation states or ionic radii into the CeO 2 sublattice, e.g., Ca 2+ , Mg 2+ , and Gd 3+ , has already proven to be effective in improving the properties of this semiconductor. − Due to its electronic properties, manganese (Mn) is a dopant that has been extensively used to change the properties of semiconductors, in particular their electronic, optical, and structural properties . Mn can exhibit multivalent oxidation states when MnO y –CeO x solid solutions are formed.…”