Fine structure of angle-resolved secondary electron emission spectra in silicon

Material contrast in SEM: Fermi energy and work function effects

“…1b, line, shows an example of this calculated distribution for Si with w (electron affinity) $ 3.2 eV and E G (band gap energy) $ 1.12 eV. These values are kept for further calculations because of their rather good agreement with experiments, or symbols, that were performed at an incident beam energy, E1, of $ 0.6 keV under ultra-high vacuum conditions on a clean Si(1 0 0) surface, where the doping level has not been indicated [33]. The agreement is less for lower beam energies such as E1 $ 0.2 keV where the spectral distribution is broader because SEs are generated closer to the surface and they may escape into vacuum after a reduced number of inelastic events (see Section 4.3).…”

Charged particle dynamics and distribution functions in low pressure dual-frequency capacitively coupled plasmas operated at low frequencies and high voltages

“…We adopt the phenomenological model for the yield functions as it was proposed in [75] based on [76,77] and discussed in [33,34] for SiO 2 with model parameters listed in table 1 and shown in figure 2(b). For pure Si we apply the same surface model and perform adjustments to find the parameters that reproduce experimental [78][79][80] and numerical [81] data, resulting in the values listed in table 1 and shown in figure 2(c). Electrons that are emitted from the surface by electron induced secondary emission are labeled 'δ-electrons'.…”

Energy distribution of charge carriers in solids in highly non-equilibrium states considering cascade transitions and inelastic scattering

“…So the statistical model allows us to describe the pair ionising relaxation of excited carriers. The derived energy distribution function may be used for the IPES and SEES calculations (see, e.g., the works of Shatalov et al, 1988;Panchenko and Panchenko, 1994;Panchenko and Panchenko, 1997a; and for the related problems.…”