FinFET SCR structure optimization for high-speed serial links ESD protection

Chu, Li-Wei; Chang, Yi-Feng; Su, Yu-Ti; Chen, Kuo-Ji; Song, Ming-Hsiang; Lee, Jam-Wem

doi:10.1109/irps.2016.7574555

Cited by 11 publications

(2 citation statements)

References 4 publications

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“…In order to achieve efficient ESD protection for Fin-FET chips, the diode-triggered Fin-silicon-controlled rectifiers (DTFSCR), with high current conduction efficiency and controllable trigger voltage, have been explored lately [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…A checkerboard SCR has been proposed to improve the leakage current and parasitic capacitance characteristics. However, due to the large space from anode to cathode (SAC) derived from stacking topology, the on-resistance and clamping voltage of this structure will deteriorate inevitably [2]. Besides, a rotated DTFSCR has been implemented to reduce the on-resistance by minimizing the SAC, but the triggering diode inside such a device will consume a considerable part of the layout area, resulting in a decrease in area efficiency [3].…”

Section: Introductionmentioning

confidence: 99%

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All-HKMG-bounded SCR for advanced ESD protection in 14 nm FinFET technology

Du¹,

Xie²,

Wang³

et al. 2022

Semicond. Sci. Technol.

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In this paper, a novel all-high-K metal gate (HKMG)-bounded silicon-controlled rectifier (AHBSCR) is proposed for advanced electrostatic discharge (ESD) protection in FinFET processes. Depart from its prior arts, in AHBSCR, both the main SCR path and the triggering diode path are placed along the Fin direction, and all active areas are bounded by HKMG, thus expressing superior conduction capability under various ESD stresses and a more compact silicon footprint. Experimental results show that the proposed AHBSCR owns a suitable snapback window of 1.1 V–1.6 V, a fast turn-on speed of only 400 ps, an extreme low leakage current of less than 100 pA@-1 V as well as a figure of merit of 24.3 mA fF−1, indicating it is competent to replace the conventional FinFET diodes in rail-based ESD network to further improve the efficiency of ESD protection.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%