2014
DOI: 10.1155/2014/365689
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FinFETs: From Devices to Architectures

Abstract: Since Moore’s law driven scaling of planar MOSFETs faces formidable challenges in the nanometer regime, FinFETs and Trigate FETs have emerged as their successors. Owing to the presence of multiple (two/three) gates, FinFETs/Trigate FETs are able to tackle short-channel effects (SCEs) better than conventional planar MOSFETs at deeply scaled technology nodes and thus enable continued transistor scaling. In this paper, we review research on FinFETs from the bottommost device level to the topmost architecture leve… Show more

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Cited by 164 publications
(41 citation statements)
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“…In write operation, the maximum voltage that can be reached is called write voltage which is determined by division of voltage between access transistor and pull up transistor. Write stability can be confirmed by strong access transistor driving strength which decreases write voltage [1][2][3].…”
Section: Read and Write Stabilitymentioning
confidence: 96%
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“…In write operation, the maximum voltage that can be reached is called write voltage which is determined by division of voltage between access transistor and pull up transistor. Write stability can be confirmed by strong access transistor driving strength which decreases write voltage [1][2][3].…”
Section: Read and Write Stabilitymentioning
confidence: 96%
“…As the scaling increases scaling of voltage leads to less threshold voltage which will increase speed and also leakage power. To overcome leakage power high threshold voltage can be used but performance degrades by unacceptable margin [1][2][3].…”
Section: Speed and Leakage Currentmentioning
confidence: 99%
“…But the difficulty in fabrication of DG MOSFET (Double gate MOSFET) is encountered due to the misalignment of top gate and the back gate [3]. Hence to eliminate the misalignment of gates in DG MOSFET, Finfet [4][5] considered one of the most promising candidates for future generation transistor technologies due to their excellent electrostatic integrity such as Low leakage current, improved short-channel effect and high performance. digital multipliers play significant role in many DSP applications such as fourier transform, filters and in multiplier accumulate unit.…”
Section: Introductionmentioning
confidence: 99%
“…FinFET has higher carrier mobility, lesser wafer area, faster-switching speed, and higher transconductance in comparison with CMOS technology. 10,11 In FinFET technology, a thin fin of silicon covers the conducting channel. This reduces gate leakage current and short channel effects.…”
mentioning
confidence: 99%