2014
DOI: 10.1103/physrevlett.112.086601
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Fingerprints of Inelastic Transport at the Surface of the Topological InsulatorBi2Se3: Role of Electron-Phonon Coupling

Abstract: We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi 2 Se 3 topological insulator. At low temperatures (< 50 K) and when the chemical potential lies inside the bulk gap, the crystal resistivity is strongly temperature dependent, reflecting inelastic scattering due to the thermal activation of optical phonons. A linear increase of the current with voltage is obtained up to a threshold value at which current saturation takes place. We show that the activa… Show more

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Cited by 61 publications
(61 citation statements)
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“…Hence they open new pathways for exciting and controlling lattice and electron dynamics simultaneously [131,[143][144][145]. Coherent phonon dynamics in topological insulators is also a subject of active research [146][147][148][149] where the electron-phonon coupling appears to set a limit on the natural spin polarized surface electrons transport [150,151]. Moreover, in magnetic materials, the interaction of acoustic phonons with spins opens the pathway for new functionalities.…”
Section: Coherent Phonon Sources: Electron-photon-phonon Interactionsmentioning
confidence: 99%
“…Hence they open new pathways for exciting and controlling lattice and electron dynamics simultaneously [131,[143][144][145]. Coherent phonon dynamics in topological insulators is also a subject of active research [146][147][148][149] where the electron-phonon coupling appears to set a limit on the natural spin polarized surface electrons transport [150,151]. Moreover, in magnetic materials, the interaction of acoustic phonons with spins opens the pathway for new functionalities.…”
Section: Coherent Phonon Sources: Electron-photon-phonon Interactionsmentioning
confidence: 99%
“…23 In the experiment, it is observed that the current increases with the applied voltage in low voltage regime, then shows a tendency of saturation at the intermediate regime. However, the current saturation is not complete.…”
Section: -23mentioning
confidence: 93%
“…Therefore, when the applied voltage is higher than 50 mV, the carriers are excited from surface bands to the bulk band which has finite conductance. 23 However, this argument is valid only when the transport is nearly ballistic so that the carriers in the surface bands can have enough energy gain to be excited to the bulk bands. However, for the diffusive transport in the experimental setup, the average energy gain is estimated to be less than 4 meV when the applied voltage is 50 mV.…”
Section: -23mentioning
confidence: 99%
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“…Finally, the recent transport measurements of M.V. Costache et al 51 were interpreted with strong coupling to a single optical phonon mode of energy ∼ 8 meV.…”
Section: -8mentioning
confidence: 99%