Finite element analysis of fatigue cracks formation in power metallisation of a semiconductor device subjected to active cycling

Кравченко, Г. А.; Karunamurthy, Balamurugan; Nelhiebel, Michael; Pettermann, H.E.

doi:10.1109/eurosime.2013.6529951

Cited by 12 publications

(17 citation statements)

References 13 publications

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“…As can be observed, the crack emerges at the transition from the convex to the straight segment of the interface. It is interesting to note that this location was also predicted in (Kravchenko et al, 2013) for formation of fatigue crack in Cu using the Fatemi-Socie shear strain based fatigue indicator parameter. Further cycling (figure 3b) results in growth of delamination along the straight segment of the interface (indicated by points A and B in the figure) and emergence of the second crack after 220 cycles.…”

Section: Fem Model Descriptionmentioning

confidence: 97%

“…A more detailed discussion of the structural BCs can be found in (Kravchenko et al, 2013). The model was meshed with two-dimensional isoparametric elements with quadratic shape functions.…”

Section: Fem Model Descriptionmentioning

confidence: 99%

“…Various variables have been assumed to correlate with the number of cycles to (electrical) failure of a device, for example, the temperature swing (Russo et al, 2002), the accumulated plastic strain (Smorodin et al, 2008), the energy dissipated per cycle (Pietranico et al, 2011) and so on. Although this simplistic modelling approach may give information about general trends and indication of potential fatigue crack formation sites in the power metallisation (Kravchenko et al, 2013), the valuable information about the crack growth rate and the residual life remains inaccessible.…”

Section: Introductionmentioning

confidence: 99%

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FEM Study of Fatigue Crack Growth in a Power Semiconductor Chip Subjected to Transient Thermal Loading

Кравченко

Karunamurthy

Pettermann

2014

Procedia Materials Science

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A detailed finite element analysis of fatigue crack growth between metallisation layers of a power semiconductor device subjected to active cycling conditions is carried out. The active cycling and the resulting transient thermal loading is the source of the thermally-induced cyclic stresses in the microelectronic device, which may cause the fatigue failure. To model the fatigue crack formation and propagation under the transient thermal loading conditions, a coupled thermomechanical cyclic cohesive zone model based on an irreversible damage evolution equation is utilised. The contact formulation of the implemented cohesive zone model allows to consider evolving tractions and heat flux across the cohesive zone both in open and closed crack states. To accelerate simulations, a cycle jump technique without the need of damage extrapolation is utilised.

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Section: Fem Model Descriptionmentioning

confidence: 97%

“…A more detailed discussion of the structural BCs can be found in (Kravchenko et al, 2013). The model was meshed with two-dimensional isoparametric elements with quadratic shape functions.…”

Section: Fem Model Descriptionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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FEM Study of Fatigue Crack Growth in a Power Semiconductor Chip Subjected to Transient Thermal Loading

Кравченко

Karunamurthy

Pettermann

2014

Procedia Materials Science

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“…The critical plane is identified as the plane experiencing the maximum value of the Fatigue Indicator. In case of non-proportional loading the determination of the shear strain amplitude usually requires numerical search algorithm, which makes the identification of the FIP computational expensive [7]. For lifetime estimations in the LCF regime the maximum FIP can be expressed as,…”

Section: A Fatigue Crack Nucleationmentioning

confidence: 99%

“…Hence, they cannot provide an insight into the mechanism leading to material degradation. Mechanical quantities in terms of thermo-mechanical fatigue considerations seem to be more physically sound for the prediction of material degradation [6], [7].…”

Section: Introductionmentioning

confidence: 99%

Fatigue crack growth modeling in the metallization of power semiconductors under cyclic thermo-mechanical loading

Springer

Nelhiebel

Pettermann

2016

2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and

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Power semiconductors may be subjected to short electric overload pulses during operation, which induce very high temperatures and temperature gradients in the multilayer chip structure. This can lead to material degradation in the ductile metallization and repetitive overload conditions can result in overheating and destruction of the device. A unified approach is presented predicting material degradation in terms of fatigue crack nucleation and fatigue crack propagation, to identify a tolerable number of electric overload pules during operation. Fatigue Indicators based on mechanical quantities are utilized to identify locations of material failure in the power metallization and material degradation is modeled. Repetitive loading leads to an evolving damage zone. The proposed approach is implemented within the framework of the Finite Element Method and exemplified at a simplified, generic metallization stack.

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Novel Approach for Assessing Cyclic Thermomechanical Behavior of Multilayered Structures

et al. 2022

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Microelectronic devices require material systems combining multiple layers of material for proper operation. These inevitably have different properties, for example, the elastic modulus or the coefficient of thermal expansion. Permanently reoccurring Joule heating and successive cooling during the operation of such devices lead to high thermal stresses within the materials and even failure due to thermomechanical fatigue or delamination of layers. This is dependent on the internal stress state and the amount of plastic strain accumulated. Here, in situ thermomechanical cantilever bending experiments on a Si–WTi–Cu material system to investigate these internal stress states and their influence on deformation behavior using a novel experimental methodology are shown. During heating to , the Cu layer undergoes partial plastic deformation, which may lead to the failure of a potential device using this material combination. To assess the internal stress and strain states based on the in situ observation, a model incorporating plastic deformation and known residual stresses of layers is proposed and verified by Finite Element Analysis.

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Finite element analysis of fatigue cracks formation in power metallisation of a semiconductor device subjected to active cycling

Cited by 12 publications

References 13 publications

FEM Study of Fatigue Crack Growth in a Power Semiconductor Chip Subjected to Transient Thermal Loading

FEM Study of Fatigue Crack Growth in a Power Semiconductor Chip Subjected to Transient Thermal Loading

Fatigue crack growth modeling in the metallization of power semiconductors under cyclic thermo-mechanical loading

Novel Approach for Assessing Cyclic Thermomechanical Behavior of Multilayered Structures

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