2007
DOI: 10.1063/1.2712507
|View full text |Cite
|
Sign up to set email alerts
|

Finite size effect in ZnO nanowires

Abstract: In this talk, we present electrical and optical measurements on ZnO nanowires whose sizes do not yet reach quantum confinement region. Thin ZnO nanowires were synthesized via carbon thermal chemical vapor deposition method under low growth temperature using tin as catalyst. Electron microscopy reveals that the as-grown nanowires are of high crystalline quality with an average diameter around 12 nm. Electrical transport measurements show significant increase in conductivity with a lack of gate modulation and a … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

4
106
1

Year Published

2008
2008
2015
2015

Publication Types

Select...
4
4

Relationship

1
7

Authors

Journals

citations
Cited by 123 publications
(111 citation statements)
references
References 26 publications
4
106
1
Order By: Relevance
“…15 These ZnO nanowires have been shown to exhibit carrier densities of about N =10 17 cm −3 at room temperature and distinct bound exciton-related photoluminescence ͑PL͒ emission lines at liquid-helium temperatures. 16,17 Despite this, the evidence of excitonic recombination in electroluminescent ZnO devices has been indirect, and inferred from a peak emission energy smaller than what one would expect for band-to-band recombination. 12,[18][19][20][21] The main drawback of the ZnO material system is the lack of reproducible, stable, high-quality p-type doping with a reasonable concentration, which is required for most optoelectronic applications.…”
mentioning
confidence: 99%
“…15 These ZnO nanowires have been shown to exhibit carrier densities of about N =10 17 cm −3 at room temperature and distinct bound exciton-related photoluminescence ͑PL͒ emission lines at liquid-helium temperatures. 16,17 Despite this, the evidence of excitonic recombination in electroluminescent ZnO devices has been indirect, and inferred from a peak emission energy smaller than what one would expect for band-to-band recombination. 12,[18][19][20][21] The main drawback of the ZnO material system is the lack of reproducible, stable, high-quality p-type doping with a reasonable concentration, which is required for most optoelectronic applications.…”
mentioning
confidence: 99%
“…16 Such correlation pointed towards an important role of the surface in the associated radiative recombination processes. 14,[16][17][18][19] Again, there is no agreement on the origin of such a surface enhancement of the visible band in NWs. It could be related with a higher surface density of the contributing states, their surface activation by the hole accumulation at the surface depletion, or the promotion of slower recombination processes related with the charge separation occurring in the built-in electric field layer.…”
mentioning
confidence: 94%
“…ZnO nanowires grown in this fashion possess a highly crystalline structure and can have a high aspect ratio [4,13,15], but THE high temperatures required for this growth process pose problems for thermally-restricted fabrication processes. Hydrothermal growth methods allow for low-temperature synthesis of ZnO nanowires (NWs) directly on a variety of novel substrates required for proposed flexible substrate applications such as power-harvesting fabrics [11,16].…”
Section: Introductionmentioning
confidence: 99%
“…Popular methods for growing ZnO nanowires include vapor-solid or vapor-liquidsolid (gas-phase synthesis) [2,4,9,13], and hydrothermal (solution-phase synthesis) [1,3,5,7,8,[10][11][12]14,16] 13,15,16]. ZnO nanowires grown in this fashion possess a highly crystalline structure and can have a high aspect ratio [4,13,15], but THE high temperatures required for this growth process pose problems for thermally-restricted fabrication processes.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation