Plastic deformation induced by stress concentrations near crystal defects occurs through the generation of prismatic dislocation loops (PDL). The production of PDLs leads to void growth and particle decoherence. In this work we use dislocation dynamics simulations to characterize two mechanisms for PDL formation. The first mechanism corresponds to a classical model of PDL generation from dislocation nucleation. The second mechanism considers PDL generation through cross-slip of a screw dislocation intersecting the particle. We systematically study the effect of the crystal lattice and defect type on PDL generation for both mechanisms as a function of pressure. The simulations show image stresses produced by the dislocation's interaction with the free surface of a void suppresses PDL generation. The highest PDL generation rates are found for a dislocation nucleated from a void in a body-centered cubic lattice. Our simulations also show helical coiling of screw dislocations produces a continuous emission of PDLs without the need for dislocation nucleation at pressures as low as 1.0 GPa.(DD) simulations. DD simulations are capable of accurately capturing the motion of dislocations in the vicinity of large stress gradients due to material heterogeneities [13]. Two-and threedimensional DD simulations excluding cross-slip have been used to capture the later stages of void growth through multiplication of dislocations in the crystal [14,15]. In these simulations, the number of dislocation sources in the vicinity of a void activated by its stress concentration 45 increases with the void size. This observation may indicate higher void growth rates for large voids. The reduction in active dislocation sources for small voids is likely to cause void growth to transition from multiplication of existing dislocations to dislocation nucleation for voids below 500 nm [15]. For voids on the order of 50 nm, three-dimensional DD simulations have shown that locally activated modes of dislocation motion, including dislocation cross-slip and nucleation, are 50 indispensable for PDL generation [7]. These DD simulations have also drawn attention to the importance of void image stresses for cross-slip in PDL formation at low pressures. Dislocation cross-slip at free surfaces has also been shown in three-dimensional DD simulations to be an important generator of dislocation sources available for dislocation multiplication [6,16,17].The formation of PDLs through cross-slip is largely dependent on the crystal lattice which 55 determines both the number of secondary glide planes available for cross-slip and their orientation relative to one another. Here, we consider PDL formation in face-centered cubic (fcc), body-centered cubic (bcc), and hexagonal close-packed (hcp) lattices. In atomistic simulations of hydrostatically loaded voids, the availability of cross-slip planes leads to the formation of foursided rhombus PDLs in fcc lattices [3] and hexagonal or triangular PDLs in bcc lattices [18, 4]. 140