“…Ultraviolet (UV) light sources, including light-emitting diodes (LEDs) and laser diodes (LDs), are of fundamental interest in a wide range of applications, e.g., bioanalytical, material processing, water purification, plant lighting, free-space optical communication, disinfection, and medical diagnostics. − Traditionally, UV light sources are mainly based on semiconductors with bandgap energies larger than 3.0 eV, such as SnO 2 , ZnO, GaN, etc. − Among these, GaN-based materials are the most commercially used in the design and fabrication of UV LEDs and LDs due to the successful manufacture of light emitters with reasonable p-type conductive characteristics. ,,− However, when working at high current injection levels, these optoelectronic devices would suffer a severe reduction of the internal quantum efficiency (IQE), the so-called efficiency droop. , That is caused by high in-plane strain, strong piezoelectric polarization fields, inevitable carrier leakage, and so forth. ,, Moreover, the realistic applications of GaN-based micro/nanoscale LEDs and LDs are hindered by the synthesis of high-quality nano/micromaterials, which are commonly based on time-consuming and expensive single-crystal synthesis techniques; high vacuum and high temperature are necessary for these synthesis techniques. − Briefly speaking, the achievement of low-cost and high-quality single-crystalline nano/micromaterials, especially for commercial manufacture of low-dimensional UV LEDs and LDs, still remains a long-term and arduous task.…”