First demonstration of hetero-epitaxial ε-Ga2O3 MOSFETs by MOCVD and a F-plasma surface doping

Chen, Weiqu; Luo, Haoxun; Chen, Zimin; Pei, Yanli; Wang, Gang; Lü, Xing

doi:10.1016/j.apsusc.2022.154440

Cited by 17 publications

(7 citation statements)

References 44 publications

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“…The peak with lower binding energy (O A ) should be related to lattice oxygen (O 2− ), and the peak with higher binding energy (O B ) corresponds to oxygen vacancies. 22,46,47 As we can see, the O B peak of pure ε-Ga 2 O 3 film is more pronounced, and tends to disappear after the introduction of Zn, indicating that the introduction of Zn inhibits the generation of oxygen vacancies.…”

Section: Resultsmentioning

confidence: 83%

“…20,21 Compared to b-Ga 2 O 3 , e-Ga 2 O 3 has a similar wide bandgap (B4.9 eV), higher lattice symmetry, lower anisotropic crystal structure, and lower growth temperature. [22][23][24][25] In recent years, research studies on solar-blind UV detectors based on e-Ga 2 O 3 thin films have begun to rise and are receiving increasing attention. [26][27][28] Although many efforts are being dedicated towards developing high-performance e-Ga 2 O 3 thin film solar-blind detectors, it is still a big challenge to simultaneously achieve low dark current, high specific detectivity, high UVvisible rejection ratio and quick response speed.…”

Section: Introductionmentioning

confidence: 99%

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Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga₂O₃ films by introducing Zn impurity

Sun,

Liu,

Chen

et al. 2024

J. Mater. Chem. C

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Section: Resultsmentioning

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga₂O₃ films by introducing Zn impurity

Sun,

Liu,

Chen

et al. 2024

J. Mater. Chem. C

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“…The LFOMs of the OD and HSD devices are 2.4 and 7.8 MW/cm 2 , respectively. The electrical characteristics of the heteroepitaxial Ga 2 O 3 MOSFETs are summarized in Table 1 [ 18 , 38 , 39 , 40 , 41 , 42 ]. Some parameters are missing because they were not discussed in the published results.…”

Section: Resultsmentioning

confidence: 99%

A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact

Oh,

Jeong,

Kang

et al. 2024

Micromachines

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Among various polymorphic phases of gallium oxide (Ga2O3), α-phase Ga2O3 has clear advantages such as its heteroepitaxial growth as well as wide bandgap, which is promising for use in power devices. In this work, we demonstrate α-Ga2O3 MOSFETs with hybrid Schottky drain (HSD) contact, comprising both Ohmic and Schottky electrode regions. In comparison with conventional Ohmic drain (OD) contact, a lower on-resistance (Ron) of 2.1 kΩ mm is achieved for variable channel lengths. Physics-based TCAD simulation is performed to validate the turn-on characteristics of the Schottky electrode region and the improved Ron. Electric-field analysis in the off-state is conducted for both the OD and HSD devices. Furthermore, a record breakdown voltage (BV) of 2.8 kV is achieved, which is superior to the 1.7 kV of the compared OD device. Our results show that the proposed HSD contact with a further optimized design can be a promising drain electrode scheme for α-Ga2O3 power MOSFETs.

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“…Even though the bandgap of 𝜖-Ga 2 O 3 is lower than that of AlN, our previous work has shown that 𝜖-Ga 2 O 3 thin films grown by MOCVD possess a resistivity of ≈10 4 Ωcm, which is high enough for RF resonator application. [44] To date, for the fabrication of RF resonators, AlN thin film is usually grown by Magnetron Sputtering at low temperature, [30][31][32] which is much easier than the MOCVD growth of 𝜖-Ga 2 O 3 investigated in this work. However, 𝜖-Ga 2 O 3 has demonstrated such a unique property that it possesses a good balance between the bandgap (resistivity) and piezoelectricity and is a better material choice for application in RF resonators.…”

Section: Resultsmentioning

confidence: 99%

ε‐Ga₂O₃: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators

Chen

Lü

et al. 2022

Advanced Science

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The explosion of mobile data from the internet of things (IoT) is leading to the emergence of 5G technology with dramatic frequency band expansion and efficient band allocations. Along with this, the demand for high-performance filters for 5G radio frequency (RF) front-ends keeps growing. The most popular 5G filters are constructed by piezoelectric resonators based on AlN semiconductor. However, AlN possesses a piezoelectric constant d 33 lower than 5 pm V −1 and it becomes necessary to develop novel semiconductors with larger piezoelectric constant. In this work, it is shown that strong piezoelectricity exists in 𝝐-Ga 2 O 3 . High-quality phase-pure 𝝐-Ga 2 O 3 thin films with a relatively low residual stress are prepared. A switching spectroscopy piezoelectric force microscope (SS-PFM) measurement is carried out and the piezoelectric constant d 33 of 𝝐-Ga 2 O 3 is determined to be ≈10.8-11.2 pm V −1 , which is twice as large as that of AlN. For the first time, surface acoustic wave (SAW) resonators are demonstrated on the 𝝐-Ga 2 O 3 thin films and different vibration modes resonating in the GHz range are observed. The results suggest that 𝝐-Ga 2 O 3 is a great material candidate for application in piezoelectric devices, thanks to its wide bandgap, strong piezoelectric property, small acoustic impedance, and low residual stress.

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First demonstration of hetero-epitaxial ε-Ga2O3 MOSFETs by MOCVD and a F-plasma surface doping

Cited by 17 publications

References 44 publications

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga₂O₃ films by introducing Zn impurity

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga₂O₃ films by introducing Zn impurity

A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact

ε‐Ga₂O₃: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators

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First demonstration of hetero-epitaxial ε-Ga2O3 MOSFETs by MOCVD and a F-plasma surface doping

Cited by 17 publications

References 44 publications

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga2O3 films by introducing Zn impurity

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga2O3 films by introducing Zn impurity

A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact

ε‐Ga2O3: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators

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Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga₂O₃ films by introducing Zn impurity

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga₂O₃ films by introducing Zn impurity

ε‐Ga₂O₃: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators