First Demonstration of State-of-the-art GaN HEMTs for Power and RF Applications on A Unified Platform with Free-standing GaN Substrate and Fe/C Co-doped Buffer

Wu, Mei; Zhang, Meng; Yang, Ling; Hou, Bin; Yu, Qian; Li, Shiming; Shi, Chunzhou; Zhao, Wei; Lü, Hao; Chen, Weiwei; Zhu, Qing; Ma, Xiaohua

doi:10.1109/iedm45625.2022.10019550

Cited by 10 publications

(4 citation statements)

References 3 publications

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“…Secondly, VGa-impurity, VN-impurity, Mg-H complexes, VN-Mg complexes, etc., also form point defects in GaN materials, introducing deep-level traps. In addition, although there has been significant development in GaN-on-GaN homoepitaxial growth and device fabrication [26,27], a considerable portion of devices still use heteroepitaxial substrates, in which large amounts of dislocations and defects are caused by lattice mismatch during the epitaxial growth process, forming deep-level trap states in the bandgap. The energy levels, positions, and corresponding characterization methods of the traps identified in GaN HEMT devices are shown in Figure 2 .…”

Section: Types and Impacts Of Trapsmentioning

confidence: 99%

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Zou,

Yang,

Qiao

et al. 2023

Micromachines

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Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered promising candidates for power devices due to their superior advantages of high current density, high breakdown voltage, high power density, and high-frequency operations. However, the development of GaN HEMTs has been constrained by stability and reliability issues related to traps. In this article, the locations and energy levels of traps in GaN HEMTs are summarized. Moreover, the characterization techniques for bulk traps and interface traps, whose characteristics and scopes are included as well, are reviewed and highlighted. Finally, the challenges in trap characterization techniques for GaN-based HEMTs are discussed to provide insights into the reliability assessment of GaN-based HEMTs.

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Section: Types and Impacts Of Trapsmentioning

confidence: 99%

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Zou,

Yang,

Qiao

et al. 2023

Micromachines

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“…Gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) have great potential for high-frequency and high-power applications because of the advantages of heterojunction materials, including their high breakdown electric field, high two-dimensional electron gas (2DEG) sheet density and high electron mobility [ 1 , 2 , 3 , 4 ], leading to potential RF applications, including remote sensing, radar and wireless communication [ 5 , 6 ]. Except for the superiority of GaN-based HEMTs mentioned above, linearity is also a key characteristic for RF applications, especially for wireless communication.…”

Section: Introductionmentioning

confidence: 99%

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

et al. 2023

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In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated. It was found that the peak value of the transconductance (Gm), current gain cut-off frequency (fT) and power gain cut-off frequency (fmax) of the TGN-devices were larger than that of the DGN-devices because of the enhanced gate control from the top gate. Although the TGN-devices and DGN-devices demonstrated flattened transconductance, fT and fmax profiles, the first and second transconductance derivatives of the DGN-devices were lower than those of the TGN-devices, implying an improvement in linearity. With the nanochannel width decreased, the peak value of the transconductance and the first and second transconductance derivatives increased, implying the predominant influence of sidewall gate capacitance on the transconductance and linearity. The comparison of gate capacitance for the TGN-devices and DGN-devices revealed that the gate capacitance of the tri-gate structure was not simply a linear superposition of the top planar gate capacitance and sidewall gate capacitance of the dual-gate structure, which could be attributed to the difference in the depletion region shape for tri-gate and dual-gate structures.

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“…Devices based on GaN materials exhibit higher output power density and energy conversion efficiency, enabling system miniaturization and lightweight design. Today, GaN devices have been widely used in radio frequency (RF) applications [2][3][4] and power electronics [5][6][7]. However, during the process of GaN HEMT epitaxial growth, surface states like dangling bonds or defects will exist on the interrupted surfaces [8,9].…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Comparison of MOCVD- and LPCVD-SiNx Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications

Deng,

Zhou,

et al. 2023

Micromachines

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Passivation is commonly used to suppress current collapse in AlGaN/GaN HEMTs. However, the conventional PECV-fabricated SiNx passivation layer is incompatible with the latest process, like the “passivation-prior-to-ohmic” method. Research attention has therefore turned to high-temperature passivation schemes. In this paper, we systematically investigated the differences between the SiNx/GaN interface of two high-temperature passivation schemes, MOCVD-SiNx and LPCVD-SiNx, and investigated their effects on the ohmic contact mechanism. By characterizing the device interface using TEM, we reveal that during the process of MOCVD-SiNx, etching damage and Si diffuses into the semiconductor to form a leakage path and reduce the breakdown voltage of the AlGaN/GaN HEMTs. Moreover, N enrichment at the edge of the ohmic region of the LPCVD-SiNx device indicates that the device is more favorable for TiN formation, thus reducing the ohmic contact resistance, which is beneficial to improving the PAE of the device. Through the CW load-pull test with drain voltage VDS = 20V, LPCVD-SiNx devices obtain a high PAE of 66.35%, which is about 6% higher than MOCVD-SiNx devices. This excellent result indicates that the prospect of LPCVD-SiNx passivation devices used in 5G small terminals will be attractive.

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First Demonstration of State-of-the-art GaN HEMTs for Power and RF Applications on A Unified Platform with Free-standing GaN Substrate and Fe/C Co-doped Buffer

Cited by 10 publications

References 3 publications

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

Comprehensive Comparison of MOCVD- and LPCVD-SiNx Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications

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