Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

Abstract

In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated. It was found that the peak value of the transconductance (Gm), current gain cut-off frequency (fT) and power gain cut-off frequency (fmax) of the TGN-devices were larger than that of the DGN-devices because of the enhanced gate control from the top gate. Although the TGN-devices and DGN-devices demonstrated flattened transconductance, fT and fmax profiles, the first and second transconductance derivatives of the DGN-devices were lower than those of the TGN-devices, implying an improvement in linearity. With the nanochannel width decreased, the peak value of the transconductance and the first and second transconductance derivatives increased, implying the predominant influence of sidewall gate capacitance on the transconductance and linearity. The comparison of gate capacitance for the TGN-devices and DGN-devices revealed that the gate capacitance of the tri-gate structure was not simply a linear superposition of the top planar gate capacitance and sidewall gate capacitance of the dual-gate structure, which could be attributed to the difference in the depletion region shape for tri-gate and dual-gate structures.

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks

“…Gallium nitride(GaN) high electron mobility transistor (HEMT) has been studied over the last decade in consideration of high power and high frequency electronic applications [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 ]. Recently, GaN HEMT with ferroelectric insulated gate have attracted a large number of attentions.…”