1991
DOI: 10.1049/el:19910435
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First digital optical switch based on InP/GaInAsP double heterostructure waveguides

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Cited by 25 publications
(1 citation statement)
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“…Namely the isolation mechanism must function on a sub-micron scale and it cannot perturb the underlying guided optical fields. Trenches have previously been reported for use in isolating contacts in an optical switch [83], however not for this particular DOS design. As well, the performance of trench and implant isolation have not previously been compared and assessed.…”
Section: E Lectrical Isolation Of E Lectrodesmentioning
confidence: 99%
“…Namely the isolation mechanism must function on a sub-micron scale and it cannot perturb the underlying guided optical fields. Trenches have previously been reported for use in isolating contacts in an optical switch [83], however not for this particular DOS design. As well, the performance of trench and implant isolation have not previously been compared and assessed.…”
Section: E Lectrical Isolation Of E Lectrodesmentioning
confidence: 99%