First InGaN/GaN thin film LED using SiCOI engineered substrate

Abstract

PACS 68.55.-a, 81.05. Ea, 81.15.Gh, 85.60.Jb InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metalorganic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut™ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results demonstrate the potential of SiCOI engineered substrates as an alternative to laser lift off for thin film LED fabrication.

Light extraction enhancement of sapphire‐free InGaN LEDs using single‐ and double‐side surface roughening techniques

“…The sapphire-free LED structure with a combination of surface roughening is regarded as a good candidate for enhancing the light extraction efficiency of nitride LEDs [4][5][6]. These methods involve roughening a single surface [7] and double surfaces [8].…”

“…1 Introduction GaN-based materials, due to their unique properties, have attracted much attention in optoelectronic devices such as light emitting diodes (LEDs) and laser diodes in the blue-ultraviolet spectral region [1][2][3]. The sapphire-free LED structure with a combination of surface roughening is regarded as a good candidate for enhancing the light extraction efficiency of nitride LEDs [4][5][6]. These methods involve roughening a single surface [7] and double surfaces [8].…”