First LSI Applicable Thin SOI Films Formed by Lateral Solid Phase Epitaxy

Ishida, Hirokazu; Aiso, Fumiki; Mizukami, Masaaki; Nishihara, K.; Iguchi, Tomohiro; Ichinose, D.; Fukumoto, A.; Suzuki, Takaya; Arai, F.; Mizushima, Ichiro

doi:10.7567/ssdm.2009.b-6-3

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“…In the case of Si-seeded lateral sold-phase epitaxial-growth of a-Si, 26,27 vacancy-cluster defects and grain boundaries were introduced in coalesced regions of growth fronts, because of shrinkage in the volume by crystallization of a-Si. 27 In addition, for Si-seeded lateral epitaxy of Ge using chemical vapor deposition (CVD), it was reported that lattice planes of grown Ge tilted by ∼0.1 • and ∼0.2 • for growth length with ∼100 nm and ∼10 μm, respectively, which resulted in the defect generation. 21 Such lattice tilting is induced by interaction between grown layers and underlying insulating films.…”

Section: Resultsmentioning

confidence: 99%

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Atomically-Coherent-Coalescence of Two Growth-Fronts in Ge Stripes on Insulator by Rapid-Melting Lateral-Crystallization

Kurosawa

Toko

Sadoh

et al. 2012

ECS J. Solid State Sci. Technol.

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High-quality Ge-on-insulator (GOI) is a key structure for integrating high-speed transistors and optical-and spintronic-devices on Si-platform. Effects of coalescence of two growth-fronts on crystallinity of GOI-stripes during rapid-melting lateral-crystallization are investigated as a function of growth-distance. For long growth-distance (≥150 μm), grain-boundaries are generated in coalesced regions due to tilting growth-fronts (1-3 • ). On the other hand, for short distance (≤5 μm), lattice-structures coherently align without strains. Moreover, for intermediate distance (5-150 μm), lattice-structures of growth-fronts coherently align without any defects, though heterogeneous lattice-strains are locally induced due to slightly tilting growth-fronts (∼0.5 • ). Such atomically-coherentcoalescence for growth-distance <150 μm shows significant advantage of rapid-melting-crystallization over vapor and solid-phase techniques.

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Section: Resultsmentioning

confidence: 99%

“…Thus, this ECS Journal of Solid State Science and Technology, 2 (3) P54-P57 (2013) P57 rapid-melting technique shows a significant advantage over conventional vapor and solid-phase epitaxy, where defects are introduced in the coalesced regions even for the very small tilting angle (∼0.1 • ) with a short growth distance (∼100 nm). 21,23,27…”

Section: Resultsmentioning

confidence: 99%