The relationship between chemical structure (N/Si ratio) or physical structure (laminate structure) of Si-rich nitride charge-trapping layer for MONOS and its electrical characteristics (Program/Erase window, fresh data retention and data retention after Program/Erase cycling stress) are investigated in detail. A laminate structure of Si-rich nitride has been developed that can realize a sufficient Program/Erase window and excellent data retention for MLC operation.

A multiscale simulation model is developed for optimizing the parameters of SiO 2 plasma-enhanced atomic layer deposition of high-aspect-ratio hole patterns in three-dimensional (3D) stacked memory. This model takes into account the diffusion of a precursor in a reactor, that in holes, and the adsorption onto the wafer. It is found that the change in the aperture ratio of the holes on the wafer affects the concentration of the precursor near the top of the wafer surface, hence the deposition profile in the hole. The simulation results reproduced well the experimental results of the deposition thickness for the various hole aperture ratios. By this multiscale simulation, we can predict the deposition profile in a high-aspect-ratio hole pattern in 3D stacked memory. The atomic layer deposition parameters for conformal deposition such as precursor feeding time and partial pressure of precursor for wafers with various hole aperture ratios can be estimated.

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