First performance results of the ASML alpha demo tool

Meiling, H.; Meijer, H.E.H.; Banine, VY Vadim; Moors, Roel; Groeneveld, Regier; Voorma, Harm Jan; Mickan, Uwe; Wolschrijn, B. T.; Mertens, Bas; Baars, Gregor van; Kürz, P.; Harned, Noreen

doi:10.1117/12.657348

Cited by 67 publications

(25 citation statements)

References 11 publications

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“…EUV flare can be predicted based on the surface roughness of the individual mirrors and can be corrected in the mask design [64,65]. The EUVL exposure tool flare target is in a range of within 8%, which corresponds to a projected optic MSFR level of 0.14 nm rms [14]. This level of MSFR is feasible based on current optimized test mirror data.…”

Section: Opticsmentioning

confidence: 99%

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Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

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Section: Opticsmentioning

confidence: 99%

“…The maximum numerical aperture was designed to be 0.25 with a 50 nm resolution [13]. AD tool used a tin-discharge-produced plasma (DPP) EUV source [14].…”

Section: Introductionmentioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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“…Extreme ultraviolet (EUV) Iithography continues to be the leading candidate for high-volume chip production beyond the 32-nm technology node and has now entered the commercialization phase [1,2]. One of the biggest challenges still facing EUV is the development of resists that sinrultaneously achieve the resolution, sensitivity and line-edge-roughness (LER) requirements for commercialization 13,41.…”

Section: Introductionmentioning

confidence: 99%

A high-throughput contact-hole resolution metric for photoresists: full-process sensitivity study

Anderson

Naulleau

2008

Advances in Resist Materials and Processing Technology XXV

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The ability to accurately quantify the intrinsic resolution of chemically amplified photoresists is critical for the optimization of resists for extreme ultraviolet (EUV) Iithography. We have recently reported on two resolution metrics that have been shown to extract resolution numbers consistent with direct observation. In this paper we examine the previously reported contact-hole resolution metric and explore the sensitivity of the metric to potential error sources associated with the experimental side of the resolution extraction process. For EUV exposures at the SEMATECH Berkeley microfield exposure tool, we report a full-process error-bar in extracted resolution of 1.75 nm RMS and verify this result experimentally.

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“…This is due to the fact that the relative simplicity of such tools, in general, enables them to provide higher resolution capabilities than production scale alpha tools. For example, alpha tools now in use and preproduction tools in development [4,5] have numerical apertures (NA) of 0.25 as compared to the NA of 0.3 available from the latest EUY METs. In the case of the SEMATECH Berkeley !VIET (BMET) [1, 6,7], the higher NA is further enhanced by a unique programmable coherence illuminator allowing it to implement resolution enhancing illumination and achieve lower k, values (in principle, as low as 0.25).…”

Section: Introductionmentioning

confidence: 99%

The SEMATECH Berkeley microfield exposure tool: learning at the 22-nm node and beyond

Naulleau

Anderson

Baclea-an

et al. 2009

Alternative Lithographic Technologies

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Microfield exposure tools (METs) continue to playa dominant role in the development of extreme ultraviolet (EUY) resists. One of these tools is the SEMATECH Berkeley 0.3-NA MET operating as a SEMATECH resist and mask test center. Here we present an update summarizing the latest resist test and characterization results. The relatively small numerical aperture and limited illumination settings expected from 1st generation EUY production tools make resist resolution a critical issue even at the 32-nm node. [n this presentation, sub 22 nm half pitch imaging results of EUY resists are reported. We also present contact hole printing at the 30-nm level. Although resist development has progressed relatively well in the areas of resolution and sensitivity, line-edge-roughness (LER) remains a significant concern. Here we present a summary of recent LER performance results and consider the effect of system-level contributors to the LER observed from the SEMA TECH Berkeley microfield tool.

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First performance results of the ASML alpha demo tool

Cited by 67 publications

References 11 publications

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Next-generation lithography for 22 and 16 nm technology nodes and beyond

A high-throughput contact-hole resolution metric for photoresists: full-process sensitivity study

The SEMATECH Berkeley microfield exposure tool: learning at the 22-nm node and beyond

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