First Principle Calculation of Electronic, Optical Properties and Photocatalytic Potential of CuO Surfaces

Abstract

We have performed DFT calculations of electronic structure, optical properties and photocatalytic potential of the low-index surfaces of CuO. Photocatalytic reaction on the surface of semiconductor requires the appropriate band edge of the semiconductor surface to drive redox reactions. The calculation begins with the electronic structure of bulk system; it aims to determine realistic input parameters and band gap prediction. CuO is an antiferromagnetic material with strong electronic correlations, so that we have applied DFT + U calculation with spin polarized approach, beside it, we also have used GW approximation to get band gap correction. Based on the input parameters obtained, then we calculate surface energy, work function and band edge of the surfaces based on a framework developed by Bendavid et al ( J. Phys. Chem. B, 117, 15750-15760) and then they are aligned with redox potential needed for water splitting and CO 2 reduction. Based on the calculations result can be concluded that not all of low-index CuO have appropriate band edge to push reaction of water splitting and CO2 reduction, only the surface CuO(111) and CuO(011) which meets the required band edge. Fortunately, based on the formation energy, CuO(111) and CuO(011) is the most stable surface. The last we calculate electronic structure and optical properties (dielectric function) of low-index surface of CuO, in order to determine the surface state of the most stable surface of CuO.

Probing Electronic Properties of CVD Monolayer Hexagonal Boron Nitride by an Atomic Force Microscope

“…Based on KPFM, the Fermi level of monolayer h-BN (∼4.95 eV), which lays in the middle of the bandgap, is 250-270 meV higher than that of CuO (111) (∼5.22 eV (Xia et al, 2018, Ahmad, 2016). This result can be further confirmed by the histogram distributions as depicted in Figures 5E,H, where two prominent peaks can be observed.…”