2015
DOI: 10.1007/s00340-015-6058-4
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First principle defect study of MoSe2 field effect transistor

Abstract: the TMD-based devices [6][7][8][9]. This has resulted in the demonstration of devices (MOSFET) based on MoS 2 monolayer in which various short channel effects can be observed easily such as negative differential resistance (NDR) in the armchair(ANR) nanoribbon which has encouraged the device studies based on other TMD materials. MoSe 2 being one of the most promising materials among them.Despite all the robustness to the short channel effects, in two-dimensional ribbons such as graphene, silicene, germacrene a… Show more

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Cited by 8 publications
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