First-principles calculations of nitrogen-doped antimony triselenide: A prospective material for solar cells and infrared optoelectronic devices

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb40Se20S40 Thin Films at Different Fluences for Photonic Devices

“…In this regard, the Sb–Se–S-based films were intensively studied due to the photoconductive nature of Sb 2 Se 3 and Sb 2 S 3 semiconductors that crystallize in an orthorhombic structure . These semiconductors have interesting technical applications such as solar cells, photodetectors, optical and thermoelectric cooling devices, optoelectronic devices in the near-infrared range, etc. Ammar investigated the effect of addition of Sb to Se 85 Sb x S 15– x films and the corresponding structural and optical changes.…”

Alternative Lone‐Pair ns2‐Cation‐Based Semiconductors beyond Lead Halide Perovskites for Optoelectronic Applications

“…In view of the existing effective recombination centers, [ 233 ] many studies have focused on strategies for inhibiting defects or incorporating impurities to elevate the Fermi level. [ 234–237 ] Following various approaches, including quasiepitaxy growth, surface sulfurization, and post‐treatment on Sb 2 S 3 films, the efficiency of Sb 2 S 3 ‐based solar cells can be improved by up to ≈7%. [ 238–240 ] Additionally, incorporating the effective impurities is also beneficial for increasing the carrier concentration.…”

“…Thus, by mapping a series of materials, including PbX (X = S, Se, Te), Sb 2 Te 3 , Bi 2 X 3 (X = Se, Te), and inorganic halide perovskites, into a 2D space with the ES and ET as two coordinates, they found MVB had well‐defined borders to covalent, and iono‐covalent regions, indicating its distinction. [ 229–307 ] Such a map demonstrated that the MVB mechanism approximately possessed one shared electron and moderate electron transfer between adjacent atoms. This predictive model can also give rise to the favorable characteristics in above materials, including large Born effective charge, high optical dielectric constants, strong optical interband transition, etc.…”

Elucidating the role of lattice thermal conductivity in π‐phases of IV‐VI monochalcogenides for highly efficient thermoelectric performance

“…3 Thermoelectric energy conversion, at low temperature gradients with respect to the environmental temperature, is very effective in harvesting electricity from heat sources. [4][5][6][7][8][9] A dimensionless quantity ZT is used to measure the thermoelectric materials' performance by the equation, ZT = (σS 2 /κ)T where σ, S, κ, and T (absolute) represent electrical conductivity, Seebeck coefficient, thermal conductivity, and temperature, respectively. Electronic thermal conductivity (κ e ) and lattice thermal conductivity (κ l ) are included in κ = κ e + κ l .…”

“…To save the huge amounts of waste energy, the technologies to recover waste heat gain a great interest of researchers 3 . Thermoelectric energy conversion, at low temperature gradients with respect to the environmental temperature, is very effective in harvesting electricity from heat sources 4‐9 . A dimensionless quantity ZT is used to measure the thermoelectric materials' performance by the equation, ZT = ( σS 2 / κ ) T where σ , S , κ , and T (absolute) represent electrical conductivity, Seebeck coefficient, thermal conductivity, and temperature, respectively.…”