Articles you may be interested inOn the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductorfield-effect-transistors Energy distribution of interface traps in germanium metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric and its impact on mobility Appl. Phys. Lett. 93, 083510 (2008); 10.1063/1.2976632Low temperature mobility in hafnium-oxide gated germanium p -channel metal-oxide-semiconductor field-effect transistors Appl.The role of Si orientation and temperature on the carrier mobility in metal oxide semiconductor field-effect transistors with ultrathin Hf O 2 gate dielectrics An efficient numerical method for the evaluation of the Green's function used in the calculation of the Coulomb-limited electron mobility in high-metal oxide semiconductor field effect transistors is presented. This simple method is applicable to gate stacks with an arbitrary number of layers of varying dielectric permittivity. A charge profile with varying dielectric profile is demonstrated to show an increase in Coulomb-limited mobility of 16% in comparison to a point charge located at the interface. A metal gate reduces the scattering potential due to its infinite dielectric constant which leads to lesser impact of charge in comparison to a polysilicon gate. The Coulomb-limited mobility for devices having identical equivalent oxide thickness of 0.5-0.8 nm with ͑a͒ a hafnium silicate interfacial layer ͑IL͒ and ͑b͒ zero IL is presented.[This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 130.64.175.185 On: Mon, 08 Dec 2014 16:08:55 063706-2 D. Casterman and M. M. De Souza J. Appl. Phys. 107, 063706 ͑2010͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 130.64.175.185 On: Mon, 08 Dec 2014 16:08:55 063706-3 D. Casterman and M. M. De Souza J. Appl. Phys. 107, 063706 ͑2010͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 130.64.175.185 On: Mon, 08 Dec 2014 16:08:55 063706-4 D. Casterman and M. M. De Souza J. Appl. Phys. 107, 063706 ͑2010͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 130.64.175.185 On: Mon, 08 Dec 2014 16:08:55 063706-5 D. Casterman and M. M. De Souza J. Appl. Phys. 107, 063706 ͑2010͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 130.64.175.185 On: Mon, 08 Dec 2014 16:08:55 063706-6 D. Casterman and M. M. De Souza J. Appl. Phys. 107, 063706 ͑2010͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http...