2022
DOI: 10.1039/d2cp03628b
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First-principles investigation of in-plane anisotropies in XYTe4 monolayers with X = Hf, Zr, Ti and Y = Si, Ge

Abstract: In-plane anisotropic materials can introduce additional degrees of freedom in tuning physical properties, which expand the range of opportunities for designing novel semiconductor devices and exploring distinct applications. In this...

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Cited by 4 publications
(2 citation statements)
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“…50 Furthermore, the dielectric constants of SrHfN 2 and SrZrN 2 vary in a wide range under strain, implying very promising prospect for practical applications as anisotropic optical and electronic materials. 51,52…”
Section: Resultsmentioning
confidence: 99%
“…50 Furthermore, the dielectric constants of SrHfN 2 and SrZrN 2 vary in a wide range under strain, implying very promising prospect for practical applications as anisotropic optical and electronic materials. 51,52…”
Section: Resultsmentioning
confidence: 99%
“…[23][24][25][26][27][28] For 2D materials with a strong in-plane anisotropy, theoretical studies have verified that the uniaxial strain is supposed to tune their properties differently along different crystalline directions providing an extra degree of freedom for the strain-induced tunability. [29,30] However, in the case of the experimental study, applying strain along different crystalline orientations of 2D anisotropic materials is still a challenge for common multi-points bending setups, which has restricted the strain engineering's development on anisotropic materials. Recent studies based on anisotropic materials are scarce and focus on the investigation of the effect of only uniaxial tensile strain.…”
Section: Introductionmentioning
confidence: 99%