First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance

Theoretical and experimental investigations of enhanced carbon nanotube-gold interface conductivity through nitrogen doping

“…29 The recipe to determine the contact resistance is described in ref. 30 and 31 and we briefly reiterate it here. From the zerobias calculations, we first calculate the transmission coefficient of the device, T dev , using which the zero-bias conductance (G dev ) can be obtained as…”

Physical insight of random fluctuation in metal/IGZO Schottky barriers for low-variation contact optimal design

“…Previous study has employed DFT to explore the formation of Schottky barriers at the interface chemical composition and the influence of doping, which aligns well with experimental results. 29 Electronic property calculations were performed based on the atomic model of the interface, and the Schottky barrier was extracted using local projected density of states (LDOS) analysis. The most typical metal, Au, was selected for extracting the Schottky barrier at the interfaces A and B.…”