2017
DOI: 10.1103/physrevb.95.075206
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First-principles mode-by-mode analysis for electron-phonon scattering channels and mean free path spectra in GaAs

Abstract: We present a first-principles framework to investigate the electron scattering channels and transport properties for polar materials by combining the exact solution of linearized electronphonon (e-ph) Boltzmann transport equation in its integral-differential form associated with the e-ph coupling matrices obtained from polar Wannier interpolation scheme. No ad hoc parameter is required throughout this calculation, and GaAs, a well-studied polar material, is used as an example to demonstrate this method. In thi… Show more

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Cited by 156 publications
(144 citation statements)
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References 74 publications
(115 reference statements)
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“…(2), the δ functions enforce the energy conservation when a phonon is absorbed or emitted. For the numerical integration, the δ functions are often replaced by smearing functions such as Gaussian or Lorentzian, but this approach requires extremely fine q-point grids to reach a good convergence [36]. Alternatively, we use the analytic form of the band dispersion in Eq.…”
Section: B Scattering Ratesmentioning
confidence: 99%
“…(2), the δ functions enforce the energy conservation when a phonon is absorbed or emitted. For the numerical integration, the δ functions are often replaced by smearing functions such as Gaussian or Lorentzian, but this approach requires extremely fine q-point grids to reach a good convergence [36]. Alternatively, we use the analytic form of the band dispersion in Eq.…”
Section: B Scattering Ratesmentioning
confidence: 99%
“…The DP theory, as the simplest method to simplify the e-ph interaction, is widely applied to approximate the carrier relaxation time and mobility in previous studies [37]. In fact, there is increasing evidence in phosphorene [23], MoS 2 [38], GaAs [39,40], GaN [41] that DP theory overestimates the carrier relaxation time and the zT value. For example, the DP theory gives the zT value of phosphorene to be close to 1 [33], which is about an order of magnitude larger than that calculated with ab initio scattering methods [23].…”
Section: Electronic Properties and Ab Initio Electron-phonon Scatteringmentioning
confidence: 99%
“…In recent years, it has become possible to calculate the strength of e-ph scattering of semiconductors in the entire Brillouin zone (BZ) purely from first principles [20][21][22][23][24] . Methods for solving the linearized Boltzmann transport equation (BTE) and calculating the electronic transport coefficients from first principles have also been developed [25][26][27][28] . However, these methods suffer from a large computational cost.…”
Section: Introductionmentioning
confidence: 99%