First-principles prediction of the negatively-charged nitrogen-silicon-vacancy center in cubic silicon carbide

Pan, Fengchun; Zhao, Mingwen; Mei, Liangmo

doi:10.1063/1.3471813

Cited by 15 publications

(6 citation statements)

References 32 publications

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“…In addition, if Δ E > 0, it suggests that FM spin alignment is more stable. According to the Heisenberg model, the nearest-neighbor magnetic coupling J 0 can be evaluated using the expression: Δ E = 4 J 0 ( R ) S 2 , where S is the net spin of the defect states . It is known that the main source of the magnetic moment for the V Zn defect arises from the two holes in the 2p band at the O sites surrounding the Zn vacancy.…”

Section: Resultsmentioning

confidence: 99%

Possible Origin of Ferromagnetism in an Undoped ZnO d0 Semiconductor

et al. 2012

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First-principles calculations were employed to investigate the effect of native defects and a hydrogen-related defect complex on ferromagnetism in an undoped ZnO semiconductor. The results show that the zinc vacancy (V Zn ) could lead to a moment of 1.73 μB in the undoped ZnO supercell, while the oxygen vacancy could not, but the formation energy of the zinc vacancy is much higher than that of the oxygen vacancy. When the hydrogen atom is doped in imperfect ZnO, the formation energy of V Zn +H I sharply decreases, compared with that of V Zn . Meanwhile, the V Zn +H I defect complex can induce a 0.99(0.65) μB moment in the Zn 15 H I O 16 supercell. Furthermore, the total energy of the ZnO supercell with two defect complexes for the ferromagnetic phase is lower than that for the antiferromagnetic phase, and the calculated results show that a strong magnetic coupling exists in the ferromagnetic phase. As an unintentionally doped element, H usually appears in ZnO prepared by many methods. So the ferromagnetism in the ZnO d0 semiconductor most probably arises from the defect complex of the zinc vacancy and H.

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Section: Resultsmentioning

confidence: 99%

Possible Origin of Ferromagnetism in an Undoped ZnO d0 Semiconductor

et al. 2012

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“…Another defect worth mentioning is the NV Si which is supposed equivalent to NV − in diamond . A recent work shows that the NV Si centre is energetically preferable in n‐type 3C‐SiC and possesses a stable 3 A 2 ground state and doubly degenerated 3 E excited states, however it hasn't been experimentally observed. SiC infrared PL associated with some of its intrinsic defects is thus an exciting platform for telecommunication photonic and opto‐electronics devices.…”

Section: Optical Defects In Sicmentioning

confidence: 99%

Quantum Effects in Silicon Carbide Hold Promise for Novel Integrated Devices and Sensors

Castelletto

Johnson

Boretti

2013

Advanced Optical Materials

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Cascade-sensitized 800 nm excited tridoped upconversion nanoparticles (UC-NPs) are developed for the fi rst time. This novel class of UCNPs employ Nd 3+ as an 800 nm photon sensitizer and Yb 3+ as a bridging ion, and show strong upconversion emission without photobleaching. They outperform classical 980 nm excited UCNPs in regard to signifi cantly decreased NIR photon absorption in water and decreased laserinduced water heating effects.

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“…For a recent review see Doherty et al [1]. The question whether the NV center in diamond is unique or whether similar defects could be generated in other materials has been the object of theoretical studies [2][3][4][5][6][7][8]. These studies suggested that it would be highly desirable to engineer defects with comparable spin and optical properties in more technological materials such as SiC, which would also allow scalability.…”

Section: Introductionmentioning

confidence: 99%

Nitrogen vacancy center in cubic silicon carbide: A promising qubit in the 1.5μm spectral range for photonic quantum networks

et al. 2018

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We have investigated the optical properties of the nitrogen vacancy (NV) − center in 3C-SiC to determine the photoluminscence zero phonon line (ZPL) associated with the 3 E → 3 A 2 intracenter transition. Combining electron paramagnetic resonance and photoluminescence spectroscopy, we show that the NV − center in 3C-SiC has a ZPL line at 1.468 μm in excellent agreement with theoretical predictions. The ZPL line can be observed up to T = 100 K. The negatively charged NV center in 3C-SiC is the structural isomorphe of the NV center in diamond and has equally a spin S = 1 ground state and a spin S = 1 excited state, long spin lattice relaxation times and presents optically induced groudstate spin polarization. These properties make it already a strong competitor to the NV center in diamond, but as its optical domain is shifted in the near infrared at 1.5 μm, the NV center in 3C-SiC is compatible with quantum photonic networks and silicon based microelectronics.

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First-principles prediction of the negatively-charged nitrogen-silicon-vacancy center in cubic silicon carbide

Cited by 15 publications

References 32 publications

Possible Origin of Ferromagnetism in an Undoped ZnO d0 Semiconductor

Possible Origin of Ferromagnetism in an Undoped ZnO d0 Semiconductor

Quantum Effects in Silicon Carbide Hold Promise for Novel Integrated Devices and Sensors

Nitrogen vacancy center in cubic silicon carbide: A promising qubit in the 1.5μm spectral range for photonic quantum networks

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