2011
DOI: 10.1088/1674-1056/20/6/068501
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First principles simulation technique for characterizing single event effects

Abstract: Ke-Ying(张科营) a) † , Guo Hong-Xia(郭红霞) a) , Luo Yin-Hong(罗尹虹) a) , Fan Ru-Yu(范如玉) a) , Chen Wei(陈 伟) a) , Lin Dong-Sheng(林东生) a) , Guo Gang(郭 刚) b) , and Yan Yi-Hua(闫逸华) c)

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Cited by 8 publications
(6 citation statements)
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“…4, and the main part is made up of four transistors of N 1 (NMOS), N 2 (NMOS), P 1 (PMOS), and P 2 (PMOS). [14,15] V dd…”
Section: Analysis Of Experiments Resultsmentioning
confidence: 99%
“…4, and the main part is made up of four transistors of N 1 (NMOS), N 2 (NMOS), P 1 (PMOS), and P 2 (PMOS). [14,15] V dd…”
Section: Analysis Of Experiments Resultsmentioning
confidence: 99%
“…Due to the good look-inside capability, three-dimensional mixed-mode technology computer aided design (TCAD) simulation has been proven to be a useful tool to investigate the mechanism of a single event effect in devices. [17][18][19] To examine the single event charge collection and pulse width in different layouts, Sentaurus SPICE/3D TCAD mixed-mode simulations were carried out in a 7-stage chain, as shown in Fig. 6.…”
Section: Discussionmentioning
confidence: 99%
“…• Power Electronics • Multiprocessors/multicore architectures [19,[1057][1058][1059][1060][1061] • Neural biological systems [1062][1063][1064][1065] • Single even upsets (SEU) [1058,[1066][1067][1068][1069] • Photovoltaic systems [477,[1070][1071][1072][1073][1074][1075][1076][1077][1078] • Read-out detectors [1079][1080][1081] • Electrical machines [1082][1083][1084][1085][1086][1087][1088][1089] • Distribution grids [1090][1091][1092][1093][1094][1095] • Vehicles [1096][1097][1098][1099][1100][1101] • BPSK and QPS...…”
Section: Other Applicationsmentioning
confidence: 99%