“…Cu is the standard interconnection material in integrated circuits due to its superior electromigration resistance and lower bulk resistivity − compared with Al metallization. − However, due to the rapid diffusion of Cu into silicon − and the consequent degradation of the semiconductor devices, a barrier layer is needed . MgO and TiN have been successfully utilized as good diffusion barriers for Cu for a long time. ,, Furthermore, the Cu/MgO interface is of great importance because it plays a crucial role in applications such as microelectronics packaging, coating, and corrosion protection, , catalysis, metal–matrix composites, recording media, etc . The epitaxial growth of face-centered-cubic (fcc) Cu on MgO has been reported at different temperatures. − However, despite the growth of bcc Cu on substrates such as Nb, Ag, and Pd, , no body-centered-cubic/tetragonal (bcc(t)) Cu has been fabricated onto MgO, which has a rock salt structure.…”