First-principles study of native point defects in Bi2Se3

Xue, Lin; Zhou, Pan; Zhang, C. X.; Hé, Changyong; Hao, Guolin; Sun, L. Z.; Zhong, Jianxin

doi:10.48550/arxiv.1207.0103

2012

DOI: 10.48550/arxiv.1207.0103

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First-principles study of native point defects in Bi2Se3

Lin Xue¹,

Pan Zhou²,

C. X. Zhang³

et al.

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2014

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“…In addition, there are anti-site defects. First-principles electronicstructure calculations have been extensively carried out to investigate the energetics of the formation of various point defects under various growth conditions [6][7][8][9][10], and their influence on bulk conductivity. The vacancy at the Se site, V Se and the anti-site defects, viz., Se Bi and Bi Se are the intrinsic defects with low formation energies that account for the observed n-doped behavior of Bi 2 Se 3 .…”

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confidence: 99%

Role of Se vacancies on Shubnikov-de Haas oscillations in Bi ₂ Se ₃ : A combined magneto-resistance and positron annihilation study

Devidas¹,

Amaladass²,

Sharma³

et al. 2014

EPL

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received and accepted dates provided by the publisher other relevant dates provided by the publisher PACS 72.15.Gd -Galvanomagnetic and other magnetotransport effects PACS 78.70.Bj -Positron annihilation Abstract -Magneto resistance measurements coupled with positron lifetime measurements, to characterize the vacancy type defects, have been carried out on the topological insulator (TI) system Bi 2 Se 3, of varying Se/Bi ratio. Pronounced Shubnikov de Haas (SdH) oscillations are seen in nominal Bi 2 Se 3.1 crystals for measurements performed in magnetic fields up to 15 T in the 4 K to 10 K temperature range, with field applied perpendicular to the (001) plane of the crystal. The quantum oscillations, characteristic of 2D electronic structure, are seen only in the crystals that have a lower concentration of Se vacancies, as inferred from positron annihilation spectroscopy.

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mentioning

confidence: 99%

Role of Se vacancies on Shubnikov-de Haas oscillations in Bi ₂ Se ₃ : A combined magneto-resistance and positron annihilation study

Devidas¹,

Amaladass²,

Sharma³

et al. 2014

EPL

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First-principles study of native point defects in Bi2Se3

Cited by 1 publication

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Role of Se vacancies on Shubnikov-de Haas oscillations in Bi ₂ Se ₃ : A combined magneto-resistance and positron annihilation study

Role of Se vacancies on Shubnikov-de Haas oscillations in Bi ₂ Se ₃ : A combined magneto-resistance and positron annihilation study

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First-principles study of native point defects in Bi2Se3

Cited by 1 publication

References 0 publications

Role of Se vacancies on Shubnikov-de Haas oscillations in Bi 2 Se 3 : A combined magneto-resistance and positron annihilation study

Role of Se vacancies on Shubnikov-de Haas oscillations in Bi 2 Se 3 : A combined magneto-resistance and positron annihilation study

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Product

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Role of Se vacancies on Shubnikov-de Haas oscillations in Bi ₂ Se ₃ : A combined magneto-resistance and positron annihilation study

Role of Se vacancies on Shubnikov-de Haas oscillations in Bi ₂ Se ₃ : A combined magneto-resistance and positron annihilation study