First-principles theory for Schottky barrier physics

Skachkov, Dmitry; Liu, Shuanglong; Wang, Yan; Zhang, Xiaoguang; Cheng, Hai‐Ping

doi:10.1103/physrevb.104.045429

Cited by 26 publications

(15 citation statements)

References 114 publications

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“…The majority of carriers in SnO 2 /TiO 2 , which was an n-type Schottky heterojunction (Figure S11) semiconductor, were electrons . Heterojunction breakdown was utilized to promote carrier density in the sensor, , as shown in Figure S12.…”

Section: Results and Discussionmentioning

confidence: 99%

Rational Integration of SnMOF/SnO₂ Hybrid on TiO₂ Nanotube Arrays: An Effective Strategy for Accelerating Formaldehyde Sensing Performance at Room Temperature

He,

Zhao,

et al. 2023

ACS Sens.

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Formaldehyde is ubiquitously found in the environment, meaning that real-time monitoring of formaldehyde, particularly indoors, can have a significant impact on human health. However, the performance of commercially available interdigital electrode-based sensors is a compromise between active material loading and steric hindrance. In this work, a spaced TiO2 nanotube array (NTA) was exploited as a scaffold and electron collector in a formaldehyde sensor for the first time. A Sn-based metal–organic framework was successfully decorated on the inside and outside of TiO2 nanotube walls by a facile solvothermal decoration strategy. This was followed by regulated calcination, which successfully integrated the preconcentration effect of a porous Sn-based metal–organic framework (SnMOF) structure and highly active SnO2 nanocrystals into the spaced TiO2 NTA to form a Schottky heterojunction-type gas sensor. This SnMOF/SnO2@TiO2 NTA sensor achieved a high room-temperature formaldehyde response (1.7 at 6 ppm) with a fast response (4.0 s) and recovery (2.5 s) times. This work provides a new platform for preparing alternatives to interdigital electrode-based sensors and offers an effective strategy for achieving target preconcentrations for gas sensing processes. The as-prepared SnMOF/SnO2@TiO2 NTA sensor demonstrated excellent sensitivity, stability, reproducibility, flexibility, and convenience, showing excellent potential as a miniaturized device for medical diagnosis, environmental monitoring, and other intelligent sensing systems.

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Section: Results and Discussionmentioning

confidence: 99%

Rational Integration of SnMOF/SnO₂ Hybrid on TiO₂ Nanotube Arrays: An Effective Strategy for Accelerating Formaldehyde Sensing Performance at Room Temperature

He,

Zhao,

et al. 2023

ACS Sens.

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“…In that regard, Kang et al [29] used the layered partial density of states (PDOS) to calculate the Schottky barrier considering the atomic orbital hybridization. Skachkov et al [30] carried out the detailed study on the Schottky barrier of graphene/semiconductor through calculating the PDOS.…”

Section: Introductionmentioning

confidence: 99%

Analysis of doping effects on electrical conductivity and interfacial contact resistance of TiO2

Smadi

Bououdina

Mourad

et al. 2023

ETN

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In fuel cells, electrolysis cells, etc., titanium have been widely employed due to the high corrosion resistance achieved by the oxide film. But it also leads to low electrical conductivity and reduces the cells efficiency significantly. To illuminate how to improve the conductivity of titanium alloys, first-principles calculations merged with Boltzmann transport equation and Schottky-Mott theory is adopted to investigate the doping effects of thirty-seven elements on the electronic transport property. The results indicate the low electrical conductivity of TiO2 is attribute to the strong ionic bond of Ti-O. Nb, Ta, Sb and Zr can enhance the conductivity to above 1.0×103 S∙cm-1, which can also make the Schottky barrier decline from 1.05 eV to below 0.4 eV. That is mainly due to the Fermi level shifting and the stronger covalent bond formed between the impurity and O atoms. This work also investigated the effect of doping ratio on the conductivity. The covalent bond between impurity and O atoms is found to increase at a higher doped ratio. That results in the extension of the unoccupied state of the valence band maximum and conduction band minimum to the forbidden gap, which further leads to the reduction of the band gap.

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“…Unlike traditional TFETs, which require doping to create p and n regions leading to P-I-N or P-N-N structures [14] [15], our proposed iTFET necessitates a one-time doping to convert the structure into a P ++ -type body. As a result of band bending, thermally activated electrics engender an inversion layer, which transmutes the drain region into an N-type [30], resulting in a comprehensive P ++ -N + structure that mitigates the effects of dopant diffusion [12] [13,[16][17][18]. Furthermore, we integrate a control gate between the source and drain to augment device performance [19][20][21].…”

Section: Introductionmentioning

confidence: 99%

A High Schottky Barrier iTFET with Control Gate for Low Power Application

Lin,

Tse

2023

Preprint

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This research presents a simulated device structure for an Inductive Line Tunneling Tunnel Field-Effect Transistor (iTFET) with a high Schottky barrier and a control gate. We based our design process on real-world production components, factored in actual processing steps, and verified all software parameters to ensure the study's close alignment with practical manufacturing scenarios. Our configuration employs Silicon Germanium (SiGe), a narrow-bandgap semiconductor known for its cost-effectiveness, mature technology, and ability to enhance electron tunneling. We implemented Schottky Barrier Height (SBH) modulation engineering to increase the ON- state current (ION) by integrating an electrode into the semiconductor via Schottky contact. To further optimize the device performance, a control gate was included between the source and drain regions. This modification increased the ION and reduced the OFF-state current (IOFF) through the manipulation of the electric field. The simulation results demonstrated an average subthreshold swing (SSAVG) of 31.5 mV/dec, an ION of 4.96x10-6 A/μm, and an ION/IOFF ratio of 1.1x108 at a VDS of 0.2V, indicating a remarkably low subthreshold swing. These outcomes highlight the feasibility of utilizing a low thermal budget approach to fabricate high-performing TFETs that are well-suited for economical and low-energy applications.

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First-principles theory for Schottky barrier physics

Cited by 26 publications

References 114 publications

Rational Integration of SnMOF/SnO₂ Hybrid on TiO₂ Nanotube Arrays: An Effective Strategy for Accelerating Formaldehyde Sensing Performance at Room Temperature

Rational Integration of SnMOF/SnO₂ Hybrid on TiO₂ Nanotube Arrays: An Effective Strategy for Accelerating Formaldehyde Sensing Performance at Room Temperature

Analysis of doping effects on electrical conductivity and interfacial contact resistance of TiO2

A High Schottky Barrier iTFET with Control Gate for Low Power Application

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First-principles theory for Schottky barrier physics

Cited by 26 publications

References 114 publications

Rational Integration of SnMOF/SnO2 Hybrid on TiO2 Nanotube Arrays: An Effective Strategy for Accelerating Formaldehyde Sensing Performance at Room Temperature

Rational Integration of SnMOF/SnO2 Hybrid on TiO2 Nanotube Arrays: An Effective Strategy for Accelerating Formaldehyde Sensing Performance at Room Temperature

Analysis of doping effects on electrical conductivity and interfacial contact resistance of TiO2

A High Schottky Barrier iTFET with Control Gate for Low Power Application

Contact Info

Product

Resources

About

Rational Integration of SnMOF/SnO₂ Hybrid on TiO₂ Nanotube Arrays: An Effective Strategy for Accelerating Formaldehyde Sensing Performance at Room Temperature

Rational Integration of SnMOF/SnO₂ Hybrid on TiO₂ Nanotube Arrays: An Effective Strategy for Accelerating Formaldehyde Sensing Performance at Room Temperature