First results for hyper NA scanner emulation from AIMS 45-193i

Zibold, A.; Strößner, Ulrich; Rosenkranz, Norbert; Ridley, Andrew; Richter, Rigo; Harnisch, Wolfgang; Williams, Alvina M.

doi:10.1117/12.681863

Cited by 16 publications

(9 citation statements)

References 14 publications

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“…For example, linear optical polarizers are frequently utilized in lithography, [7,8] industrial vision, [9] microscopy, ellipsometry [10] or astronomic remote sensing systems. [11] All these applications substantially benefit from efficient nano-optical wire grid polarizers.…”

Section: Doi: 101002/adom201600250mentioning

confidence: 99%

Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range

Siefke

Kroker

Pfeiffer

et al. 2016

Advanced Optical Materials

386

193

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defined polarization state is a key requirement in numerous photonic applications. For example, linear optical polarizers are frequently utilized in lithography, [7,8] industrial vision, [9] microscopy, ellipsometry [10] or astronomic remote sensing systems. [11] All these applications substantially benefit from efficient nano-optical wire grid polarizers.A wire grid polarizer (WGP) is a grating type metasurface (see Figure 1). The typical operation principle for such elements requires the transmittance of TM polarized light T TM (TM transversal magneticelectrical field orthogonal to the ridges) to be much larger than that of TE polarized light T TE (transversal electric-electrical field parallel to the ridges) to achieve a significant anisotropic filter functionality. Here, the extinction ratio E r = T TM /T TE is used to express the suppression of TE polarized light. [12] WGPs are highly beneficial because of large achievable element sizes (wafer size), compactness (wafer thickness), and large acceptance angles. [13] Furthermore, their nano-optical nature allows an easy integration into other (nano-)optical elements, such as litho graphy masks, [14] enabling local polarization control. Currently, applications advance toward shorter wavelengths in order to benefit from smaller foci and characteristic electronic transitions, which can be utilized for material analysis. While WGPs are well established in the VIS and IR, suitable ones were not available in the deep ultraviolet (DUV) spectral range until very recently. [12,15,16] The lack of applicable DUV WGPs originates from challenging requirements on both structure and material properties.A structural period of the polarizer has to fulfilling the zero order conditionto avoid propagation of diffraction orders greater than the zeroth one.[17] For a normal incidence of light (ϕ = 0°) with a wavelength λ in the DUV and a fused silica substrate with a refractive index n sub a period p in the order of 100 nm is necessary. Additionally, an aspect ratio (see Figure 1: ratio of height and ridge width) larger than five is typically required. [12] The simultaneous realization of large aspect ratio and small periods is technologically extremely challenging. Fortunately however, advances in nanotechnology do allow the fabrication of such structures. [18] Pelletier et al. [15] demonstrated aluminum WGPsWire grid polarizers (WGPs), periodic nano-optical metasurfaces, are convenient polarizing elements for many optical applications. However, they are still inadequate in the deep ultraviolet spectral range. It is shown that to achieve high performance ultraviolet WGPs a material with large absolute value of the complex permittivity and extinction coefficient at the wavelength of interest has to be utilized. This requirement is compared to refractive index models considering intraband and interband absorption processes. It is elucidated why the extinction ratio of metallic WGPs intrinsically humble in the deep ultraviolet, whereas wide bandgap semiconductors are superior materia...

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Section: Doi: 101002/adom201600250mentioning

confidence: 99%

Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range

Siefke

Kroker

Pfeiffer

et al. 2016

Advanced Optical Materials

386

193

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“…To study these effects at mask level, and to discriminate between the mask and the scanner, a test mask has been measured using AIMS TM 45-193i 3 . Exposures were performed with an XT:1900Gi hyper-NA exposure tool.…”

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confidence: 99%

Characterizing the imaging performance of flash memory masks using AIMS

et al. 2008

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Flash memory has become one of the most important segments of the semiconductor industry in recent years. Flash memory is also an important driver of the lithography roadmap, with its dramatic acceleration in dimensional shrink, pushing for ever smaller feature sizes. The introduction of the XT:1700Fi and XT:1900Gi have brought the 45nm node and below within reach for memory makers. At these feature sizes mask topology and the material properties of the film stack on the mask play an important role on imaging performance. Furthermore, the break up of the array pitch regularity in the NAND-type flash memory cell by two thick wordlines and a central space, leads to feature-center placement (overlay) errors, that are inherent to the design. An integral optimization approach is needed to mitigate these effects and to control both the CD and placement errors tightly.In this paper we will present the results of aerial image measurements on mask level of a NAND-Flash Memory Gate layer using AIMS TM 45-193i. Various imaging relevant parameters, such as MEEF, EL, DoF and placement errors are measured for different mask absorber materials for features sizes ranging from 39nm half pitch to 41nm half pitch design rule on wafer level. The AIMS TM measurements are compared to experimental results obtained with a XT:1900Gi hyper-NA immersion system. Mask optimization strategies are sought to increase Depth of Focus and minimize feature-center placement errors.

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“…A leading aerial image review tool vendor has recognized the importance of vector-polarization effects and has developed and patented a novel means of accounting for these effects in their new AIMS™ 45-193i tool [5,6,7]. This was a breakthrough development as it is difficult to properly account for this effect in an aerial image tool.…”

Section: Accuracymentioning

confidence: 99%

High resolution inspection with wafer plane die: database defect detection

Hess

Wihl

Shi

et al. 2008

Photomask Technology 2008

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High Resolution reticle inspection is well-established as a proven, effective, and efficient means of detecting yieldlimiting mask defects as well as defects which are not immediately yield-limiting yet can enable manufacturing process improvements. Historically, RAPID products have enabled detection of both classes of these defects. The newlydeveloped Wafer Plane Inspection (WPI) detector technology meets the needs of some advanced mask manufacturers to identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. Wafer Plane Inspection accomplishes this goal by performing defect detection based on a modeled image of how the mask features would actually print in the photoresist. This has the effect of reducing sensitivity to non-printing defects while enabling higher sensitivity focused in high MEEF areas where small reticle defects still yield significant printing defects on wafers.This approach has several important features. The ability to ignore non-printing defects and to apply additional effective sensitivity in high MEEF areas enables advanced node development. In addition, the modeling allows the inclusion of important polarization effects that occur in the resist for high NA operation. This allows for the results to better match wafer print results compared to alternate approaches. Finally, the simulation easily allows for the application of arbitrary illumination profiles. With this approach, users of WPI can make use of unique or custom scanner illumination profiles. This allows the more precise modeling of profiles without inspection system hardware modification or loss of company intellectual property.A previous paper [1] introduced WPI in D:D mode. This paper examines the operation and results for WPI in Die:Database mode.

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First results for hyper NA scanner emulation from AIMS 45-193i

Cited by 16 publications

References 14 publications

Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range

Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range

Characterizing the imaging performance of flash memory masks using AIMS

High resolution inspection with wafer plane die: database defect detection

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