First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

Werquin, M.; Vellas, N.; Guhel, Y.; Ducatteau, D.; Boudart, B.; Pesant, J.C.; Bougrioua, Z.; Germain, M.; Jaeger, J.C. de; Gaquière, Christophe

doi:10.1002/mop.20974

Cited by 16 publications

(5 citation statements)

References 30 publications

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“…To avoid problems introduced by plasma dry etching, other isolation processing and implantation isolation technology can be used to achieve planar device isolation in AlGaN/GaN HEMTs using different ion species with multiple energies and doses-such as N + , P + /He + , O + , Fe + , Ar + , Kr + , and Zn + [219][220][221][222][223][224][225]. This can produce lattice damage, introducing a large volume of deep-level defects to reduce the carrier concentration in the injection region and creating highly resistive regions in the AlGaN/GaN HEMT structure.…”

Section: Device Isolationmentioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

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Section: Device Isolationmentioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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“…Moreover, the AlGaN/GaN wafer after mesa‐isolation exhibits a non‐planar surface, which in return affects the process yield of device. In order to avoid the problems introduced by plasma etching, implantation isolation by various ion species, such as N + , P + /He + , O + , Fe + , Ar + , Kr + , etc., has been studied to realize planar AlGaN/GaN HEMTs. However, it was observed that most of the ion species are not able to maintain the high resistivity of implanted region after high temperature annealing except for Fe + and Kr + .…”

Section: Introductionmentioning

confidence: 99%

Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra-heavy ¹³¹ Xe⁺ implantation

Arulkumaran

et al. 2017

Phys. Status Solidi A

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This work investigates the multi‐energy ultra‐heavy 131Xe+ ion implantation for the realization of planar AlGaN/GaN high electron mobility transistors (HEMTs) on Si. The 131Xe+ implant‐isolation in AlGaN/GaN HEMT structure exhibited an order of magnitude lower buffer leakage current as well as an order of magnitude higher ON/OFF current ratio (Ion/Ioff) and sheet resistance (Rsh) when compared with conventional mesa‐isolation process. The isolated region by 131Xe+ implantation demonstrated good thermal stability in the isochronal annealing up to 800 ºC. A stable buffer breakdown voltage with and without Si3N4 passivation were observed using implant‐isolation. The AlGaN/GaN HEMTs isolated by 131Xe+ implantation exhibited good pinch‐off characteristics with one order of magnitude lower OFF‐state source‐drain leakage and reverse gate leakage current and improved OFF‐state breakdown voltages by ∼106–128 V as compared to the mesa‐isolated devices. An activation energy of 0.513 eV was extracted, which denotes the energy level of lattice damage by 131Xe+ ions. These results indicate that multi‐energy implant‐isolation by ultra‐heavy 131Xe+ ions is promising for the fabrication of planar AlGaN/GaN HEMTs with improved device characteristics.

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“…It has been also shown that implantation isolation yields higher breakdown voltage of power HEMTs when compared with mesa etching . Many ion species (including O, N, Ar, Zn, Fe, and other ) have been used for isolation of AlGaN/GaN HEMTs, where some of the implantation parameters were set to yield a desired ion concentration at a set depth. In this paper, we describe the fabrication and characterization of planar isolation for AlGaN/GaN HEMTs using either aluminium or carbon dual energy implantation process.…”

Section: Introductionmentioning

confidence: 99%

Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

Taube

Kamińska

Kozubal

et al. 2015

Physica Status Solidi (a)

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Phone: þ48 22 5487942 1 Â 10 8 V/&, respectively for C and Al implantation. Characterization by XRD, Raman and photoluminescence spectroscopy provides evidence that implantation damages the crystal lattice, yielding insulating properties. It is demonstrated that the isolation is stable up to 600 8C. We also demonstrate AlGaN/GaN HEMTs on semi-insulating Ammono-GaN substrates working both in DC (I DS ¼ 800 mA/mm) and RF (up to 6.5 GHz) mode with isolation prepared by means of the described approach.

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First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

Cited by 16 publications

References 30 publications

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra-heavy ¹³¹ Xe⁺ implantation

Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

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First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

Cited by 16 publications

References 30 publications

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra-heavy 131 Xe+ implantation

Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

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Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra-heavy ¹³¹ Xe⁺ implantation