First stages of the MBE growth of InAs on (001)GaAs

Houzay, F.; Guille, C.; Moison, J. M.; Hénoc, P.; Barthe, F.

doi:10.1016/0022-0248(87)90367-8

Cited by 148 publications

(28 citation statements)

References 23 publications

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“…5,6 The growth of highly strained semiconductor layer ͑InAs, In x Ga 1Ϫx As͒ onto a substrate ͑GaAs, InP͒ could lead to the spontaneous formation of semiconductor nanometer-scale clusters. [7][8][9][10][11][12][13] Very sharp emission lines from InAs/GaAs heterostructures prepared from this method have been observed recently, [14][15][16] directly representing the ␦-function-like density of states in the zero-dimensional system. P. D. Wang et al 17 studied the optical properties of InAs/ GaAs heterostructures with InAs average layer thickness ranging from 1 Å ͑one-third of a ML͒ to 4 ML grown on ͑100͒ and ͑311͒ surfaces.…”

Section: Introductionmentioning

confidence: 99%

Effective-mass theory for InAs/GaAs strained coupled quantum dots

et al. 1996

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In the framework of effective-mass envelope-function theory, the optical transitions of InAs/GaAs strained coupled quantum dots grown on GaAs ͑100͒ oriented substrates are studied. At the ⌫ point, the electron and hole energy levels, the distribution of electron and hole wave functions along the growth and parallel directions, the optical transition-matrix elements, the exciton states, and absorption spectra are calculated. In calculations, the effects due to the different effective masses of electrons and holes in different materials are included. Our theoretical results are in good agreement with the available experimental data.

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Section: Introductionmentioning

confidence: 99%

Effective-mass theory for InAs/GaAs strained coupled quantum dots

et al. 1996

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“…23 RHEED patterns remained streaky during growth, indicating that the results were not due to threedimensional island nucleation. 24 The gradual decrease in In intensity was thus due to In surface segregation, which has been observed previously by other techniques. 25 The decrease in In surface coverage after 3 ML GaAs growth is less than the segregation-induced interface broadening measured previously of=10 ML, 25 presumably due to different growth conditions.…”

Section: Ion Scattering Spectroscopymentioning

confidence: 61%

Glancing-angle ion bombardment for modification and monitoring of semiconductor surfaces

Labanda

Barnett

1997

Journal of Elec Materi

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Using glancing-angle ion bombardment for surface modification rather than conventional near-normalincidence ions has the advantages of reducing damage and implantation projected ranges, reducing channeling, reducing sputtering, and preferentially removing surface asperities leading to flat surfaces. The effects of bombardment conditions on the surface morphology and perfection of GaAs (001), InP (001), and Si (001) surfaces are reported. Air-exposed surfaces were cleaned and smoothened to near atomic flatness without damage under optimal conditions. Sputtering yield, measured using film thicknesses and changes in reflection high-energy electron diffraction oscillations, decreased with decreasing incidence angle. The low sputtering yield and minimal damage make a glancing-angle geometry ideal for real-time characterization by ion scattering spectroscopy. Surface composition measurements on single monolayers of InAs on GaAs showed that the glancing-angle Ar beam did not measurably change the In coverage over relatively long times. A new ion beam monitoring technique was also developed that utilizes the advantages of glancing-angle ions. Specular scattering of 3 keV He ions was observed for incidence angles of 2-6 ~ from GaAs (001). Oscillation in the specularly scattered ion current during GaAs growth were observed with periods corresponding to monolayer growth times. The oscillations allow a simple quantitative interpretation based on scattering by adatoms and step edges.

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“…It is interesting to mention, that the abrupt 2D/3D change in RHEED, a growth time of 3D nuclei Ͻ0.1 s and a PL energy decrease with increasing deposition for short GI is also reported for MBE-grown InAs/GaAs dots. 9,10 It should be noted, that the growth conditions and thus the evolution of islands in MBE and MOVPE are different. 11 For instance, MOVPE-grown InP islands exhibit a much larger lateral size.…”

Section: Response To ''Comment On 'Nanoscale Inp Islands Embedded In mentioning

confidence: 99%