2016
DOI: 10.1038/srep32690
|View full text |Cite
|
Sign up to set email alerts
|

First step to investigate nature of electronic states and transport in flower-like MoS2: Combining experimental studies with computational calculations

Abstract: In the present paper, the nature of electronic states and transport properties of nanostructured flower-like molybdenum disulphide grown by hydrothermal route has been studied. The band structure, electronic nature of charge, thermodynamics and the limit of phonon scattering through density functional theory (DFT) has also been studied. The band tail states, dynamics of trap states and transport of carriers was investigated through intensive impedance spectroscopy analysis. The direct fingerprint of density an… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

3
13
0

Year Published

2017
2017
2024
2024

Publication Types

Select...
8

Relationship

3
5

Authors

Journals

citations
Cited by 21 publications
(16 citation statements)
references
References 47 publications
3
13
0
Order By: Relevance
“…The θ‐ and λ‐dependent R of both the samples are smaller than that of the pristine TiO 2 /p‐type Si because of a gradient refractive index, 2.545/2.64/5.6 . The refractive index of the 3D MoS 2 structures covering 50% of the TiO 2 /p‐Si area was estimated to 2.545, considering the refractive index of the MoS 2 in parallel direction and areal density . More importantly, in the 3D MoS 2 /TiO 2 /p‐Si photocathode, the variation of R in both R versus θ and R versus λ is negligible, indicating that the 3D MoS 2 film has omnidirectional and broadband antireflective properties for p‐Si, presumably because of the size effect below the diffraction limit…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The θ‐ and λ‐dependent R of both the samples are smaller than that of the pristine TiO 2 /p‐type Si because of a gradient refractive index, 2.545/2.64/5.6 . The refractive index of the 3D MoS 2 structures covering 50% of the TiO 2 /p‐Si area was estimated to 2.545, considering the refractive index of the MoS 2 in parallel direction and areal density . More importantly, in the 3D MoS 2 /TiO 2 /p‐Si photocathode, the variation of R in both R versus θ and R versus λ is negligible, indicating that the 3D MoS 2 film has omnidirectional and broadband antireflective properties for p‐Si, presumably because of the size effect below the diffraction limit…”
Section: Resultsmentioning
confidence: 99%
“…The absorption spectra and optical reflectance data of different MoS 2 growth time were summarized in Figure S6 (Supporting Information). [35,36] More importantly, in the 3D MoS 2 /TiO 2 /p-Si photocathode, the variation of R in both R versus θ and R versus λ is negligible, indicating that the 3D MoS 2 film has omnidirectional and broadband antireflective properties for p-Si, presumably because of the size effect below the diffraction limit. Furthermore, the dramatic reduction of reflectance with the 15 min grown 3D MoS 2 /TiO 2 /p-Si substrate is observed.…”
Section: D Mos 2 Film Growth On Tio 2 /P-si Photocathode Substratesmentioning
confidence: 99%
“…[9][10][11][12][13] There are various crystal structures of different materials that provide good thermoelectric performance, such as Half-Heusler compounds, 14 clathrates, 15 skutterudites, 16 perovskites, 17 antiperovskite, 18 some oxide materials 19,20 and chalcogenides. 21,22 The elements of group 16 (O, S, Se, Te) are known as chalcogens. Materials that contain at least one chalcogen atom are known as chalcogenide materials.…”
Section: Introductionmentioning
confidence: 99%
“…1 2D semiconducting materials such as transition metal dichalcogenides (TMDs), metal chalcogenides (e.g., MoS 2 , WS 2 ), hexagonal boron nitrides (h-BNs), and metal oxides have garnered massive interest in experimental studies as well as theoretical studies due to their unique physical and chemical properties. [2][3][4][5][6][7][8] The challenges mentioned above can be easily handled with the band engineering of these semiconductors to develop catalysts with high photocatalysis performance. 9 The possibilities to explore the recent advances in van der Waals (vdW) solids of atomic layers that form vertical quantum heterojunctions with interfaces between different 2D materials.…”
Section: Introductionmentioning
confidence: 99%