Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control

Tuktamyshev, Artur; Vichi, Stefano; Cesura, Federico; Fedorov, Alexey; Bietti, Sergio; Chrastina, D.; Tsukamoto, Shiro; Sanguinetti, S.

doi:10.1016/j.jcrysgro.2022.126906

Cited by 2 publications

(3 citation statements)

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“…[ 68,72,73 ] The In 0.52 Al 0.48 As was grown with insertion of thin InAs on precisely oriented GaAs (111)A [ 72 ] and the In 0.6 Al 0.4 As was directly grown on vicinal GaAs (111)A (a miscut of 2° toward (1–12)). [ 42,73 ] Smooth InAlAs surfaces are observed in both cases. Using these metamorphic buffers as virtual substrates, InAs QDs are formed by DE.…”

Section: Qd Growth On (111)amentioning

confidence: 91%

“…By using misoriented substrates (2°miscut), smooth surfaces can be easily obtained, even at high growth rates. [42,43] More recently, The STM observation was performed at room temperature in the constant-current mode with a tunneling current of 0.5 nA and a negative sample voltage. The surface was prepared by growth of GaAs at 400 °C on GaAs (111)A substrate with an As 4 /Ga flux ratio of %150.…”

Section: Typical Growth Condition On (111)amentioning

confidence: 99%

“…By using misoriented substrates (2° miscut), smooth surfaces can be easily obtained, even at high growth rates. [ 42,43 ] More recently, surfactant‐enhanced epitaxy has also been reported. Using bismuth, surface defects/hillocks are effectively eliminated and atomically smooth surfaces are obtained.…”

Section: Basic Characteristic Of (111)a Substratesmentioning

confidence: 99%

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Lattice‐Mismatched Epitaxy of InAs on (111)A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots

Mano,

Ohtake,

Kuroda

2024

Physica Status Solidi (a)

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This paper reviews recent developments in the lattice‐mismatched epitaxy of InAs on (111)A‐oriented substrates and related research topics, in which the presence or absence of the misfit dislocations is controlled via prescribed growth sequences. When InAs is grown on GaAs (111)A substrates under standard growth conditions, a unique lattice‐relaxation mechanism occurs. A misfit dislocation network is formed at the initial stage of InAs growth, that is followed by the layer‐by‐layer growth of relaxed InAs films. The InAs/GaAs (111)A heterostructure is being applied in infrared photodetectors which have a new operating principle that employs the high density dislocations at the interface. The InAs/GaAs (111)A heterostructure is also useful for the growth of InGaAs layers: a nearly lattice‐relaxed InGaAs containing different concentrations of indium can be formed by inserting a thin‐InAs layer between the InGaAs and GaAs. These InGaAs layers can be used as virtual substrates with a desired lattice constant for a range of devices. In addition to the formation of lattice‐relaxed structures, dislocation‐free InAs QDs can be formed on InP (111)A substrates by applying droplet epitaxy. The C 3v symmetry of the (111)A surface makes it possible to form symmetric InAs quantum dots that emit entangled photon pairs at telecommunication wavelengths.This article is protected by copyright. All rights reserved.

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Section: Qd Growth On (111)amentioning

confidence: 91%

Section: Typical Growth Condition On (111)amentioning

confidence: 99%