Flexible and fully transparent WORM memory devices based on Ag nanoparticles blended with poly(ethylene-co-vinyl acetate)

Onlaor, Korakot; Thiwawong, Thutiyaporn; Tunhoo, Benchapol

doi:10.1016/j.synthmet.2019.116200

Cited by 10 publications

(5 citation statements)

References 56 publications

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“…, where m * is the effective mass and ϕ b is the barrier height [39]. The equation can be rewritten as: ln…”

Section: Resultsmentioning

confidence: 99%

High on–off current ratio titanium oxynitride write-once-read-many-times memory

Hsu¹,

Jhang²,

Chien³

et al. 2021

Semicond. Sci. Technol.

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In this letter, we demonstrate a titanium oxynitride (TiO x N y ) write-once-read-many-times memory with a high ON/OFF current ratio of 109. The endurance and read-disturb tests both reveal high stability and data nonvolatility of the TiO x N y resistive memory. A Ti metal layer was transformed into TiO x N y using an annealing process in a nitrogen ambient. The XPS analysis shows that the TiO x N y resistive switching (RS) layer possesses few Ti interstitial defects and oxygen deficiencies. A voltage-polarity dependent set process is observed in the Ag/TiO x N y /Ti/n+-Si resistive memory. The residual Ti metal layer provides a good contact with the TiO x N y RS layer, and the electrons can transport from the Ti to the Ag electrode via tunneling processes. In the low voltage region, the conduction current is dominated by the direct tunneling mechanism. When the voltage is beyond a transition voltage of 1.25 V, the carrier transport mechanism changes to Fowler–Nordheim tunneling. The conduction mechanisms are consistent with the finding obtained by the energy band diagram analysis.

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“…, where m * is the effective mass and ϕ b is the barrier height [39]. The equation can be rewritten as: ln…”

Section: Resultsmentioning

confidence: 99%

High on–off current ratio titanium oxynitride write-once-read-many-times memory

Hsu¹,

Jhang²,

Chien³

et al. 2021

Semicond. Sci. Technol.

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“…In the literature, the R OFF /R ON ratios of WORM devices fabricated with sol-gel processes were 10 2 -10 5 , and the writing speed was 231 ns. 11,39 In contrast, those fabricated with vacuum processes involving sputtering and PLD usually had higher R OFF /R ON ratios of 10 4 -10 6 and a faster writing speed of 105 ns. In this study, the proposed Al/BaO x /n + -Si WORM device was fabricated with an inexpensive and nontoxic sol-gel process, and it exhibited an ultrahigh R OFF /R ON ratio of 10 7 with a fast writing speed of 80 ns.…”

Section: H Performance Comparison Of Worm Devicesmentioning

confidence: 99%

“…12 Comparison of R OFF /R ON ratios and writing speeds for recently reported WORM devices. 11,12,[39][40][41]…”

Section: Conflicts Of Interestmentioning

confidence: 99%

Barium oxide write-once read-many-times memory with a high resistance window

Hsu,

Cai,

Long

et al. 2024

J. Mater. Chem. C

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“…For the WORM memories reported in the literature, the I LRS /I HRS ratios are normally 6.7 Â 10 2 À 10 7 , the retention time is 3.6 Â 10 3 -7 Â 10 4 s, and the transition speed is 80-231 ns. 20,21,[43][44][45][46] Compared with the memories reported in the literature, the proposed STO-based WORM memories in this work show significant improvement in I LRS /I HRS ratio, data retention capability, and transition speed.…”

Section: B X-ray Photoelectron Spectroscopy Analysis Of Pristine Sto ...mentioning

confidence: 99%