“…On the basis of the experimental results, it is inferred that there are three factors for changing the THz reflection wave from the SiO 2 /MXene/air interface, which are the layer numbers of MXene films, the concentrations of MXene dispersions, and the incident angle of THz pulse. Generally, THz reflection modulation is usually based on external conditions such as temperature, mechanical force, laser, electric field, and so on. ,,, But in this work, THz reflection can be modulated by changing substrates coated with different MXene films, and this can be achieved by simply having a specimen holder that can hold multiple samples and can be rotated or moved. Furthermore, our functional MXene films can be used for THz antireflection or reflection-enhancing coatings by stacking the appropriate layer numbers of films on the substrate or changing the concentrations of the MXene dispersions.…”