Flexible and Transparent BEOL Monolithic 3DIC Technology for Human Skin Adaptable Internet of Things Chips

Kao, Ming‐Seng; Chen, Wei–Hsiang; Hou, Po-Cheng; Huang, Wei‐Hsiang; Shen, Chang‐Hong; Shieh, Jia‐Min; Yeh, Wen–Kuan

doi:10.1109/vlsitechnology18217.2020.9265079

Cited by 3 publications

(2 citation statements)

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“…Moreover, the ultra-thin elements can be manufactured under low thermal budget on an arbitrary substrate such as flexible polymers. 37,38 In this work, we demonstrate that the photodetectors show high performance even in an array structure, and show its potential for integration with other electronic platforms. 39…”

Section: Introductionmentioning

confidence: 65%

Enhanced performance of a photodetector based on a graphene/CVD-grown dendritic ReS₂/Ta₂O₅ vertical heterojunction

et al. 2023

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Section: Introductionmentioning

confidence: 65%

Enhanced performance of a photodetector based on a graphene/CVD-grown dendritic ReS₂/Ta₂O₅ vertical heterojunction

et al. 2023

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“…Kao et al. [ 58 ] and other researchers demonstrated additional improved process results. Regardless of the method used to increase the grain size, the grain boundaries and defects are inevitable, and may greatly degrade the resulting device’s performance and reliability, in addition to the integration density of the top transistors.…”

Section: Transition From Gaafet To Cfetmentioning

confidence: 99%

New structure transistors for advanced technology node CMOS ICs

Zhang,

Luo

et al. 2024

National Science Review

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Over recent decades, advancements in complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) have mainly relied on structural innovations in transistors. From planar transistors to the fin field-effect transistor (FinFET) and gate-all-around FET (GAAFET), more gate electrodes have been added to 3D channels with enhanced control and carrier conductance to provide higher electrostatic integrity and higher operating currents within the same device footprint. Beyond the 1-nm node, Moore’s law scaling is no longer expected to be applicable to geometrical shrinkage. Vertical transistor stacking, e.g. in complementary FETs (CFETs), 3D stack (3DS)-FETs and vertical-channel transistors, for enhanced density and variable circuit or system design represents a revolutionary scaling approach for sustained IC development. Herein, innovative works on specific structures, key process breakthroughs, shrinking cell sizes, and design methodologies for transistor structure research and development are reviewed. Perspectives on future innovations in advanced transistors with new channel materials and operating theories are also discussed.

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Source/Drain Activation for Flexible Poly-Si Nanoscale pFETs with a Laser-Buffer Layer by CO₂ laser Annealing

Hou¹,

Huang²,

Kao³

et al. 2022

ECS J. Solid State Sci. Technol.

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A laser-buffer layer of SiO2/W/SiO2 with a high reflectivity at 10.6 μm enables CO2 laser treatment for the source/drain dopant activation of poly-Si nanoscale field-effect transistor (nano-FET) (Wch/Lg = 70/70 nm) on the flexible polyimide substrate. The laser-buffer layer thermally modified by CO2 laser reduces the sheet resistance of the source/drain to 1.4 kΩ/sq. at low laser energy of 15 W and low substrate temperature of 125℃. The flexible nano-FET (nano-fFET) exhibits a subthreshold swing (S.S) of 84 mV/dec. and a low drain-induced barrier lowering of 202 mV/V at a bending radius of 10 mm. Low degradation rate of S.S and threshold voltage (Vth) for single- and multi-channel nano-fFETs arises from oxide-trap predomination after long time hot-carrier stress as demonstrated by a ΔVth power-factor of ~0.2.

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Flexible and Transparent BEOL Monolithic 3DIC Technology for Human Skin Adaptable Internet of Things Chips

Cited by 3 publications

References 0 publications

Enhanced performance of a photodetector based on a graphene/CVD-grown dendritic ReS₂/Ta₂O₅ vertical heterojunction

Enhanced performance of a photodetector based on a graphene/CVD-grown dendritic ReS₂/Ta₂O₅ vertical heterojunction

New structure transistors for advanced technology node CMOS ICs

Source/Drain Activation for Flexible Poly-Si Nanoscale pFETs with a Laser-Buffer Layer by CO₂ laser Annealing

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Flexible and Transparent BEOL Monolithic 3DIC Technology for Human Skin Adaptable Internet of Things Chips

Cited by 3 publications

References 0 publications

Enhanced performance of a photodetector based on a graphene/CVD-grown dendritic ReS2/Ta2O5 vertical heterojunction

Enhanced performance of a photodetector based on a graphene/CVD-grown dendritic ReS2/Ta2O5 vertical heterojunction

New structure transistors for advanced technology node CMOS ICs

Source/Drain Activation for Flexible Poly-Si Nanoscale pFETs with a Laser-Buffer Layer by CO2 laser Annealing

Contact Info

Product

Resources

About

Enhanced performance of a photodetector based on a graphene/CVD-grown dendritic ReS₂/Ta₂O₅ vertical heterojunction

Enhanced performance of a photodetector based on a graphene/CVD-grown dendritic ReS₂/Ta₂O₅ vertical heterojunction

Source/Drain Activation for Flexible Poly-Si Nanoscale pFETs with a Laser-Buffer Layer by CO₂ laser Annealing