Background Whereas previous studies found that concomitant antidepressant and nonsteroidal anti-inflammatory drug (NSAIDs) use may increase the risk of gastrointestinal bleeding, either drug alone increases the risk of intracranial hemorrhage (ICH). Objective To assess the risk for ICH in patients on concomitant treatment with antidepressants and NSAIDs. Methods This was a nested case-control study using national insurance claims data in Taiwan between 2005 and 2013. Drug exposure was measured and compared during 3 time windows: 1 to 30, 31 to 60, and 61 to 90 days before the index date, which is the date of the ICH event. Both traditional and newer-generation antidepressants were considered in this study. Results Patients exposed to both antidepressants and NSAIDs 1 to 30 days before the index date presented a 50% increased odds of developing ICH (OR: 1.53; 95% CI: 1.31-1.80) compared with patients receiving antidepressants alone. Specifically, the concomitant use of nonselective NSAIDs and antidepressants increased these odds compared with antidepressants alone (OR: 1.56; 95% CI: 1.31-1.84), but using a selective cyclooxygenase-2 inhibitor with antidepressant did not alter ICH risk. Regarding antidepressant class, newer-generation antidepressants generally increase the odds of developing ICH by 60% when used concomitantly with NSAIDs. Conclusion and Relevance Our results suggested that the concomitant use of antidepressants and NSAIDs was associated with an increased odds of developing ICH. NSAIDs, especially nonselective NSAIDs, and serotonergic antidepressants played an important role in this risk. Given the prevalent use of these 2 classes of drugs, this potential drug interaction deserves more attention.

Flexible optoelectronics have garnered considerable interest for applications such as optical communication, motion capture, biosignal detection, and night vision. Transitionmetal dichalcogenides are widely used as flexible photodetectors owing to their outstanding electrical and optical properties and high flexibility. Herein, a two-dimensional (2D) Sb 2 Se 3 filmbased one transistor−one resistor (1T1R) flexible photodetector with high photosensing current and detection ranges from visible to near-infrared was developed. The flexible 1T1R was fabricated using an efficient field-effect transistor platform with the 2D Sb 2 Se 3 film directly deposited on the sensing region using a lowtemperature plasma-assisted chemical vapor reaction. The photodetector could achieve a maximum I photo /I dark of 15,000 under white light with a power density of 26 mW/cm 2 , in which the photodetector showed quick rising and falling response times of 0.16 and 0.28 s, respectively. The 2D Sb 2 Se 3 film exhibits broadband absorption in the visible and IR regions, yielding an excellent photoresponse under laser illumination with different wavelengths. To investigate the flexibility and stability of the 1T1R photodetector, the photoresponses were measured under different bending cycles and curvatures, which maintained its functions and exhibited high stability under convex and concave bending at a curvature radius of 20 mm.

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