Flexible and transparent resistive switching devices using Au nanoparticles decorated reduced graphene oxide in polyvinyl alcohol matrix

Midya, Anupam; Gogurla, Narendar; Ray, S. K.

doi:10.1016/j.cap.2015.03.008

Cited by 37 publications

(21 citation statements)

References 36 publications

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“…The incorporation of Au NPs in graphene may produce plasmonic effects that lead to the enhancement of optical absorption, resulting in improved performance of optoelectronic devices. Furthermore, the charge confinement in Au NP incorporation in graphene can create electrical bi-stability, demonstrating memory characteristics due to charge trapping and de-trapping 28 .…”

Section: Introductionmentioning

confidence: 99%

Rapid synthesis and decoration of reduced graphene oxide with gold nanoparticles by thermostable peptides for memory device and photothermal applications

Otari

Kumar

Anwar

et al. 2017

Sci Rep

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This article presents novel, rapid, and environmentally benign synthesis method for one-step reduction and decoration of graphene oxide with gold nanoparticles (NAuNPs) by using thermostable antimicrobial nisin peptides to form a gold-nanoparticles-reduced graphene oxide (NAu-rGO) nanocomposite. The formed composite material was characterized by UV/Vis spectroscopy, X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, and high-resolution transmission electron microscopy (HR-TEM). HR-TEM analysis revealed the formation of spherical AuNPs of 5–30 nm in size on reduced graphene oxide (rGO) nanosheets. A non-volatile-memory device was prepared based on a solution-processed ZnO thin-film transistor fabricated by inserting the NAu-rGO nanocomposite in the gate dielectric stack as a charge trapping medium. The transfer characteristic of the ZnO thin-film transistor memory device showed large clockwise hysteresis behaviour because of charge carrier trapping in the NAu-rGO nanocomposite. Under positive and negative bias conditions, clear positive and negative threshold voltage shifts occurred, which were attributed to charge carrier trapping and de-trapping in the ZnO/NAu-rGO/SiO2 structure. Also, the photothermal effect of the NAu-rGO nanocomposites on MCF7 breast cancer cells caused inhibition of ~80% cells after irradiation with infrared light (0.5 W cm−2) for 5 min.

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Section: Introductionmentioning

confidence: 99%

Rapid synthesis and decoration of reduced graphene oxide with gold nanoparticles by thermostable peptides for memory device and photothermal applications

Otari

Kumar

Anwar

et al. 2017

Sci Rep

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“…As is well known, GQDs show superior charge-storage capabilities for potential applications in electronics. The charge-storage ability is derived from charge trapping by the GQDs, which affects the material transport [31][32][33][34] . The electric carriers under the first negative pulse are injected from the Al electrode into the albumen:GQD structure via TE.…”

Section: Resultsmentioning

confidence: 99%

Biosynaptic devices based on chicken egg albumen:graphene quantum dot nanocomposites

Sung

Park

et al. 2020

Sci Rep

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Biosynaptic devices based on chicken egg albumen (ceA):graphene quantum dot (GQD) hybrid nanocomposites were fabricated to achieve stable synaptic behaviors. current-voltage (i-V) curves for the biosynaptic devices under consecutive negative and positive voltage sweeps showed clockwise pinched hysteresis, which is a critical feature of a biological synapse. The effect of the GQD concentration in the ceA layer on the device performance was studied. the retention time of the biosynaptic devices was relatively constant, maintaining a value above 10 4 s under ambient conditions. the carrier transport mechanisms of the biosynaptic devices were described and analyzed on the basis of the slopes of the I-V curves and their fittings.Due to the limitation on the speed of data transfer between the memory and the central processing unit, neuromorphic computing is faced with a bottleneck when the von Neumann computing architecture is used 1,2 . The use of nanoscale integrated circuitry based on a biomimetic brain to operate a neuromorphic system is an emerging research field because such platforms offer high-speed processing and improved energy efficiency. These demands have prompted the development of two-terminal memristors as promising candidates for artificial synapses because they can emulate synaptic plasticity with low power consumption. Many two-terminal synaptic devices are required, for reduced production cost, to mimic the complex human brain 2-6 .Nowadays, various oxide-based materials have been reported as components for resistive switching devices. The resistive switching mechanism of oxide-based devices is observed in the formation and the rupture of conducting filaments in the dielectric due to the application of an electrical pulse 7-10 . In addition, the memristors fabricated with organic materials are based on the resistive switching mechanism. The synaptic characteristics of memristors fabricated using organic/inorganic hybrid nanocomposites have been intensively investigated because such devices offer the advantages of simple fabrication, low cost, high flexibility, and low power consumption. When synaptic devices are fabricated utilizing inorganic/organic nanocomposites, matrix materials with charge-storage capability are typically deposited by using a spin-coating method [11][12][13][14] .Recently, a variety of emerging materials have been introduced to implement artificial neurons and artificial synapses 15,16 . Among the various biomaterials, chicken egg albumen (CEA) has been extensively used for potential applications in memristive devices, transistors, and synaptic devices 17-21 . CEA has recently been considered as a novel candidate owing to its promising applications in devices with human-friendly properties and in next-generation devices. The proteins in albumen will denature when a large amount of heat energy is applied in the devices. The denaturation of the proteins in CEA reduces the probability of oxygen scattering and changes the paths of oxygen diffusion, resulting in an increase in the p...

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Section: Application Of Graphene-based Memristors In Flexible Electromentioning

confidence: 99%

“…The fabricated device demonstrated a bipolar RS performance with ~1-V operation voltage in the SET process and a ~10 3 on/off ratio. The resistance distribution result indicated that the device exhibited better performance when the resistance state switched to LRS [185]. Another RRAM device based on an Al/rGO/ITO/flexible substrate with a combination of Au nanoparticles (Au NPs) and polyvinyl alcohol (PVA) was reported by Midya et al The Au/rGO/PVA dielectric layer was fabricated with a solution-processed method.…”

Section: Application Of Graphene-based Memristors In Flexible Electromentioning

confidence: 99%

Memristive Non-Volatile Memory Based on Graphene Materials

Shen

Zhao

et al. 2020

Micromachines

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Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young’s modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V−1∙s−1), and high thermal (5000 Wm−1∙K−1) and superior electrical conductivity (1.0 × 106 S∙m−1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.

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Flexible and transparent resistive switching devices using Au nanoparticles decorated reduced graphene oxide in polyvinyl alcohol matrix

Cited by 37 publications

References 36 publications

Rapid synthesis and decoration of reduced graphene oxide with gold nanoparticles by thermostable peptides for memory device and photothermal applications

Rapid synthesis and decoration of reduced graphene oxide with gold nanoparticles by thermostable peptides for memory device and photothermal applications

Biosynaptic devices based on chicken egg albumen:graphene quantum dot nanocomposites

Memristive Non-Volatile Memory Based on Graphene Materials

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