2019
DOI: 10.1039/c9ra02855b
|View full text |Cite
|
Sign up to set email alerts
|

Flexible carbon nanotube Schottky diode and its integrated circuit applications

Abstract: Carbon nanotubes (CNTs), a low-dimensional material currently popular in industry and academia, are promising candidates for addressing the limits of existing semiconductors. In particular, CNTs are attractive candidates for flexible electronic materials due to their excellent flexibility and potential applications. In this work, we demonstrate a flexible CNT Schottky diode based on highly purified, preseparated, solution-processed 99% semiconducting CNTs and an integrated circuit application using the CNT Sch… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
13
0

Year Published

2020
2020
2023
2023

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 15 publications
(13 citation statements)
references
References 33 publications
0
13
0
Order By: Relevance
“…Compared to other reverse diodes fabricated by conventional bulk materials and other 2D materials reported in the literature, , our heterodiode exhibited a higher rectification ratio of several orders of magnitude, as shown in Figure (e). Moreover, under ultralow bias voltage sweeping from −0.4 to 0.4 V (Figure (c)), our heterodiode also meets the requirement of an integrated circuit (IC) that needs a rectification ratio over 10 5 , which is attributed to negligible threshold bias voltage provided by the tunneling platform. In order to describe the performance of the index of the rectifier conversion rate between the on/off state, we calculated the logarithmic slope of output curves ( ) shown in Figure (c).…”
Section: Resultsmentioning
confidence: 85%
“…Compared to other reverse diodes fabricated by conventional bulk materials and other 2D materials reported in the literature, , our heterodiode exhibited a higher rectification ratio of several orders of magnitude, as shown in Figure (e). Moreover, under ultralow bias voltage sweeping from −0.4 to 0.4 V (Figure (c)), our heterodiode also meets the requirement of an integrated circuit (IC) that needs a rectification ratio over 10 5 , which is attributed to negligible threshold bias voltage provided by the tunneling platform. In order to describe the performance of the index of the rectifier conversion rate between the on/off state, we calculated the logarithmic slope of output curves ( ) shown in Figure (c).…”
Section: Resultsmentioning
confidence: 85%
“…Meanwhile, to enhance the applicability in clinical settings especially in resource‐limited environments, handheld pumps can be used for flow generation without external pumping system. [ 30,74,75 ]…”
Section: Resultsmentioning
confidence: 99%
“…To-this-date, etching processes with oxygen plasma and ozone combined with a lithographic technique have often been used for the implementation of the CNT device array. [39,40] However, the production throughput of these techniques is not high, and the contamination of CNTs by the photoresist causes low conductivity. These responses are unsuitable for the proper operation of the THz sensor array.…”
Section: Free-standing Cnt Film Array Patch Formed Via the Self-alignmentioning
confidence: 99%