Flexible infrared photodetector based on indium antimonide nanowire arrays

Abstract

Narrow bandgap semiconductors like indium antimonide (InSb) are very suitable for high-performance room temperature infrared photodetectors, but the fragile nature of the wafer materials hinders their application as flexible/wearable devices. Here, we present a method to fabricate a photodetector device of assembled crystalline InSb nanowire (NW) arrays on a flexible substrate that balances high performance and flexibility, facilitating its application in wearable devices. The InSb NWs were synthesized by means of a vapor–liquid–solid technique, with gold nanoclusters as seeding particles. The morphological and crystal properties were investigated using scanning electron microscopy, x-ray diffraction and high-resolution transmission electron microscopy, which revealed the unique spike shape and high crystallinity with (111) and (220) planes of InSb NWs. The flexible infrared photodetector devices were fabricated by transferring the NWs onto transparent and stretchable polydimethylsiloxane substrate with pre-deposited gold electrodes. Current versus time measurement of the photodetector devices under light showed photoresponsivity and sensitivity to mid-infrared at bias as low as 0.1 V while attached to curved surfaces (suitable for skin implants). A high-performance NW device yielded efficient rise and decay times down to 1 s and short time lag for infrared detection. Based on dark current, calculated specific detectivity of the flexible photodetector was 1.4 × 1012 Jones. The performance and durability render such devices promising for use as wearable infrared photodetectors.

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“…All of the semiconductors produced up until now have some form of rigidity, making them not so good for this type of application. In a recent study, Shafa et al , grew InSb nanowires on a silicon substrate coated with a thin layer of gold acting as a seeding layer 112 . By controlling the flow rate of the precursors during the vapor–liquid–solid technique, as well as utilizing the gold seeding, InSb NWs with diameters as low as 30 nm and below (classified as quantum wires) were successfully grown.…”

An infrared photothermoelectric detector enabled by MXene and PEDOT:PSS composite for noncontact fingertip tracking

“…Mid-infrared (MIR, 2.5–25 μm) detectors that can convert MIR radiation into electrical signals have been employed in many fields 1 , such as in digital imaging 2 , wearable devices 3 , and energy-harvesting fields 4 , 5 . Presently, commercial MIR detectors mainly adopt traditional mercury cadmium telluride (MCT) 6 , gallium arsenide (GaAs) 7 , indium antimonide (InSb) 8 , or other quantum materials 9 , 10 . However, most of these detectors generally suffer from issues such as material toxicity, cryogenic operating condition requirements, strong bandgap dependence, and high-cost fabrication processes 11 .…”