Flexible Multistate Data Storage Devices Fabricated Using Natural Lignin at Room Temperature

Abstract

The growing interest in bioinspired and sustainable electronics has induced research on biocompatible and biodegradable materials. However, conventional electronic devices have been restricted due to their nonbiodegradable and sometimes harmful and toxic materials, which can even cause environmental issues. Here, we report a resistive switching random access memory (ReRAM) device based on lignin, which is a biodegradable waste product of the paper industry. The active layer of the device can be easily formed using a simple solution process on a plastic substrate. The memory devices show stable bipolar resistive switching behavior with good endurance and retention. Appropriate control of the maximum reset voltage and compliance current can yield multibit data storage capability with at least four resistance states, which can be exploited to realize a high-density memory device. The resistive switching mechanism may be a result of formation and rupture of carbon-rich filaments. These results suggest that lignin is a promising candidate material for an inexpensive and environmentally benign ReRAM device. We believe that this study can initiate a new route toward development of biocompatible and flexible electronics.

Synaptic and Digital Switching in Diffusion Effect‐Assisted Oxides for All‐Inorganic Flexible Memristor

“…To further analyze the conduction mechanism of charge carriers, the I–V curve is fitted in log–log coordinate (Figure b). In LRS, the fitted curve shows linear characteristics (slope ≈1) indicating that Ohmic conduction behavior dominates the conduction mechanism, which is agreement with conductive filament theory . Figure S3, Supporting Information, shows the change trend of resistances both in LRS and HRS with different cell areas.…”

“…Recently, some solution processed multi-function memristors based on organics were reported, synaptic and digital switching behaviors were observed in the devices. [6][7][8] Compared to organic materials, metal oxides are widely used and considered as promising materials with low cost, simple structure and good compatibility. [9][10][11] However, the metal oxides-based memristors that combined synaptic and digital switching characteristics in a single cell were rarely reported.…”

“…In LRS, the fitted curve shows linear characteristics (slope %1) indicating that Ohmic conduction behavior dominates the conduction mechanism, which is agreement with conductive filament theory. [6] Figure S3, Supporting Information, shows the change trend of resistances both in LRS and HRS with different cell areas. The high resistances decrease as the cell area increase, implying that the filament is not formed in HRS.…”

Phototunable Biomemory Based on Light‐Mediated Charge Trap

“…In addition, biomaterials allow a biocompatible interface between electronic devices and biological worlds, thus broadening corresponding biotechnological and medicinal applications, such as implantable chips, artificial neurons, and electronic skin 20, 21, 22, 23, 24. Various types of biomaterials have been used as active units for fabrication of data‐storage devices, such as protein, polysaccharide, nucleic acid, and virus 25, 26, 27, 28, 29, 30. Due to versatile properties, such as biodegradability, biocompatibility, bioresorbability, optical transparency, and light weight, proteins, the most readily accessible biomolecules can be used as an attractive building blocks for the development of RRAM devices and endow these electronic memories with excellent performance and environmental benignity 31, 32.…”

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

“…In order to rectify the toxicity shortcoming of the organic memory device, the biomaterial is the best choice for safe and sustainable memory technology. Many biomaterials were used as an active layer in the memory devices such as fibroin, egg albumen, lignin, DNA, protein, and many more. However, these devices required large switching voltages and reported endurance and retention are not comparable with conventional inorganic memory devices.…”