Flexible One Diode-One Phase Change Memory Array Enabled by Block Copolymer Self-Assembly

Abstract

Flexible memory is the fundamental component for data processing, storage, and radio frequency communication in flexible electronic systems. Among several emerging memory technologies, phase-change random-access memory (PRAM) is one of the strongest candidate for next-generation nonvolatile memories due to its remarkable merits of large cycling endurance, high speed, and excellent scalability. Although there are a few approaches for flexible phase-change memory (PCM), high reset current is the biggest obstacle for the practical operation of flexible PCM devices. In this paper, we report a flexible PCM realized by incorporating nanoinsulators derived from a Si-containing block copolymer (BCP) to significantly lower the operating current of the flexible memory formed on plastic substrate. The reduction of thermal stress by BCP nanostructures enables the reliable operation of flexible PCM devices integrated with ultrathin flexible diodes during more than 100 switching cycles and 1000 bending cycles.

Flexible transparent high-voltage diodes for energy management in wearable electronics

“…ZnO is a "rediscovered" semiconductor receiving remarkable interest on behalf of its unique merits and promising technological applications. Currently, the flexible diodes are all fabricated below 200 °C, using either low-temperature-synthesized oxide [27][28][29][30][31][32][33][34][35] and organic [36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51] materials or high-temperature-prepared Si [52][53][54][55][56][57][58][59][60][61][62][63] and Ge [64] materials combined with transfer method [65], as summarized in Figure 1. The highest reverse voltage or breakdown voltage (Vb) of these flexible diodes are no more than 20 V, with an exception in References 55 and 59 where flexible single-crystalline Si wafers (30 μm thick) were used as the active layers.…”

Unconventional Inorganic‐Based Memristive Devices for Advanced Intelligent Systems

“…As in the drain current–voltage ( I D – V D ) plot in Figure j, flexible 1 T‐1 R memory presented excellent RS characteristics with mechanical endurance during 1000 iterations of bending. Mun et al also reported a flexible 1 PN diode‐1 PCM (1 D‐1 P) array on a PI substrate using the Si transfer method. In particular, Si‐containing PS‐ b ‐PDMS BCPs were adopted to introduce a SiO x nanostructure between the GST (i.e., phase change material) and the TiN (i.e., heating electrode) reducing the reset power down to a 1/4 level and preventing thermal damage of polymers.…”

Freeform Compliant CMOS Electronic Systems for Internet of Everything Applications

“…However, lower yield of 66% and endurance of 1000 bending cycles for PCRAM are worth examining concerns restricting its practical implementation [23]. Key works on flexible ReRAM and PCRAM are summarized in table I with best performances highlighted.…”