Flexible Oxide-Based Thin-Film Transistors on Plastic Substrates for Logic Applications

Zhang, Jin; Liu, Yanghui; Liu, Ning; Xiao, Hui; Chen, Chang; Wu, Guodong

doi:10.1016/j.jmst.2014.07.009

Cited by 12 publications

(5 citation statements)

References 22 publications

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“…The most common classes of electrolyte materials consist of ionic liquids, ion-gels, polyelectrolytes, and polymer electrolytes. − Recently, polysaccharides, solid-state electrolytes, aqueous salts, and even water have been demonstrated as effective gate dielectrics. − Figure illustrates the ionic conductivities of common electrolytes. Unlike the inorganic and polymer dielectrics, the capacitance of these electrolytes is determined by the formation of the EDL, e.g., the electrolyte types, not the physical thickness of the electrolyte layer .…”

Section: High-k Dielectric Materialsmentioning

confidence: 99%

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High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

et al. 2018

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Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.

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Section: High-k Dielectric Materialsmentioning

confidence: 99%

“…Ionic conductivity ranges for common electrolytes at room temperature. The values are adopted from refs , , , and .…”

Section: High-k Dielectric Materialsmentioning

confidence: 99%

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

et al. 2018

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“…Previously reported coplanar neuron transistors based on amorphous ITO and IGZO typically work at a low frequency of 0.01-0.05 Hz [10][11][12][13], which is much lower than the average firing rate of biological neurons (∼5 Hz [1]). In this work, the MoS 2 -based neuron transistor can work ata higher frequency up to 14.6 Hz, which is close to the firing rate of biological neurons and more plausible for neuromorphic application.…”

Section: Resultsmentioning

confidence: 94%

“…However, the reported coplanar neuron transistors typically work in a low frequency of 0.01-0.05 Hz, which is much lower than the average firing rate of biological neurons (5 Hz) [1]. For example, AND logic was demonstrated in a coplanar-gate neuron transistor using an ITO thin film as the channel layer with an operating frequency of ∼0.01 Hz [10]; OR and AND functions were wasdemonstrated in neuron transistors using aproton conductor as the channel layer with an operating frequency of 0.05 Hz [11,12]. We previously reported a InGaZnO-based neuron transistor thatcan be used to implement abacus-like function, OR and AND logic, and it works ata frequency of ∼0.01 Hz [13].…”

Section: Introductionmentioning

confidence: 99%

A MoS₂-based coplanar neuron transistor for logic applications

Liu

et al. 2017

Nanotechnology

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The human brain is an extremely complex system of 10-10 neurons. To construct brain-like neuromorphic hardware, the neuron unit should be implemented effectively. Here, we report a neuron transistor based on a MoS flake, which has summation and threshold functions similar to biological neurons and may act as a basic neuron unit in neuromorphic hardware. The neuron transistor is composed of a floating gate and two control gates. A heavily doped silicon substrate serves as the floating gate, while the two control gates are capacitively coupled with the floating gate. The neuron transistor can be well controlled by the two control gates individually or simultaneously. The drain current can be modulated by the input voltages at the control gates. While the current response of the neuron transistor has a large dependence on the magnitude of the input signal, it shows little dependence on the frequency of the input signal. To demonstrate the potential neuromorphic application of the neuron transistor, functions including abacus-like function, AND logic and OR logic are realized in the neuron transistor.

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“…Polymer plastics with plenty of advantages such as lightweight, high transparency, conformable, stretchable, and bendable are appropriate for flexible substrates [30,[111][112][113] . Amorphous oxide-based TFT technologies with low process temperature are compatible with polymer plastics [114] .…”

Section: Polymer Plasticsmentioning

confidence: 99%

Oxide-based thin film transistors for flexible electronics

Wang

Gao

et al. 2018

J. Semicond.

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The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors (TFTs) are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends.

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Flexible Oxide-Based Thin-Film Transistors on Plastic Substrates for Logic Applications

Cited by 12 publications

References 22 publications

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

A MoS₂-based coplanar neuron transistor for logic applications

Oxide-based thin film transistors for flexible electronics

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Flexible Oxide-Based Thin-Film Transistors on Plastic Substrates for Logic Applications

Cited by 12 publications

References 22 publications

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

A MoS2-based coplanar neuron transistor for logic applications

Oxide-based thin film transistors for flexible electronics

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Product

Resources

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A MoS₂-based coplanar neuron transistor for logic applications