Flexible, self-powered Bi2O2Se/Graphene photoeletrochemical photodetector based on solid-state electrolytes

Two dimensional NbSe2/Nb2O5 metal–semiconductor heterostructure-based photoelectrochemical photodetector with fast response and high flexibility

“…Even though the solid-state PEC photodetector performance is slightly lower than that of the PEC-type photodetector in the liquid electrolyte, the photocurrent density of the solid device shows no obvious changes even at 15, 45, and 75° after being bent, implying superior flexibility. Compared with the state-of-the-art reports, such as SnS/SnSe 2 , 40 Te/Se, 56 and Bi 2 O 2 Se/Graphene 57 in Table 2, the excellent photodetection performance suggests the further utilization of the NbSe 2 /Nb 2 O 5 photodetector in highly sensitive, flexible, and wearable optoelectronic devices.…”

A high-performance and self-powered polarization-sensitive photoelectrochemical-type Bi2O2Te photodetector based on a quasi-solid-state gel electrolyte

“…4f, and the detailed performance parameters are summarized in Table 1. [28][29][30][31][32][33][34][35][36] Impressively, the Bi (Ox). As a result, the photocurrent can be detected at zero bias by using a semiconductor parameter analyzer.…”

Recent Progress on Graphene Flexible Photodetectors

“…Electrical tests show that under different bias voltages, the switching current ratio is as high as 10 6 . The responsivity is more than 2 × 10 3 mA/W, and the maximum D* is as high as 10 13 Jones. The test results show that in this GMG structure, the photocurrent increases with an increase in the illumination power and the grid voltage, and the transmission curves of the GMG PD under dark conditions and different illumination powers have almost the same characteristics (Figure 4h,i).…”

“…Furthermore, due to the light trapping effects of the plasma GNSs, their introduction into the devices further increased their photocurrent. The R is 5.90 × 10 4 A/W, with a D* of 1.31 × 10 13 Jones, the highest detection value of a perovskitefunctionalized graphene PD reported [136]. In addition, a flexible 10 × 10 PD array was produced.…”

“…Furthermore, optically transparent graphene exhibits high carrier mobility, and its optical performance can be adjusted via electrostatic doping or strain to realize flexible electronic devices with novel functions. In addition, the high carrier mobility of graphene ensures the ultrafast conversion of photons or plasmons into electrical signals, which is very helpful for producing ultrasensitive PDs exhibiting high photoconductivity gain [ 12 , 13 ]. In graphene-based PDs, to achieve effective light capture, it is necessary to increase the light absorption rate, establish a suitable band structure, and improve the quality of the interface.…”