“…In both cases, the process, the roughness of the sample surface, the angle between the sample and the source affect the quality of the deposition The low working pressure condition (down to 10 −4 Pa) prevents gaseous contamination and a high deposition rate (up to 1 µm min −1 ) can be achieved. Both thermal and e-beam evaporation are mainly employed for metals such as Cr [55,68,105,134,136,223,241], Au [55,68,105,108,116,117,134,136,223,228,241], Ti [68,108,128,133,228,241], Mg [105,125], Mo [187], Cu [128,133,188] and Al [112,137]. Also semiconductors [86,136,188,191,204,227] and dielectrics [140,231] can be evaporated.…”