Flexible Ultralow-Power Sensor Interfaces for E-Skin

Jiang, Chen; Cheng, Xiang; Nathan, Arokia

doi:10.1109/jproc.2019.2936105

Cited by 46 publications

(39 citation statements)

References 211 publications

(274 reference statements)

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“…Over the past decades, organic field‐effect transistors (OFETs) have received considerable attentions owing to their great potential applications in next‐generation flexible and low‐cost electronics, such as displays, [ 1–4 ] artificial skin, [ 5–7 ] chemical sensors, [ 8–10 ] etc. OFETs are composed of source/drain electrodes, gate electrode, dielectric layer and organic semiconductor layer.…”

Section: Introductionmentioning

confidence: 99%

Thiazolothiazole‐Based Quinoidal Compounds for High‐Performance n‐Channel Organic Field‐Effect Transistors with Low‐Cost Metal Electrodes

Yan

Qiao

Ouyang

et al. 2020

Adv Elect Materials

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Thiazolothiazole‐based quinoidal molecules B1 and B2 are designed and synthesized. B1 and B2 have low‐lying lowest unoccupied molecular orbital energy levels of −4.47 and −4.41 eV, respectively. In thin films, B1 forms J‐type aggregation while B2 adopts H‐type aggregation. B1 and B2 can react with copper and silver metals and form charge transfer salts. Thin‐film transistor characteristics show both compounds display n‐channel field‐effect behavior, and the Ag and Cu source–drain electrode‐based devices exhibit similar mobility as Au source–drain electrode‐based ones. B1‐based transistors with Au, Cu, and Ag electrodes exhibit electron mobilities of 0.54, 0.45, and 0.39 cm2 V−1 s−1, respectively. The mobility of B2 is 0.061 cm2 V−1 s−1 for Au electrode‐based devices, 0.081 cm2 V−1 s−1 for Cu electrode‐based devices, and 0.09 cm2 V−1 s−1 for Ag electrode‐based devices. The self‐doping layer formed by the reaction of electrodes (Ag, Cu) and organic semiconductors (B1 and B2), at the interface of electrode/organic semiconductor is responsible for the high performance of Ag and Cu electrode‐based devices. All these results demonstrate the introduction of self‐doping layer at electrode/organic semiconductor is a general strategy to fabricate high performance transistors with low cost metals Ag and Cu as source–drain electrodes.

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Section: Introductionmentioning

confidence: 99%

Thiazolothiazole‐Based Quinoidal Compounds for High‐Performance n‐Channel Organic Field‐Effect Transistors with Low‐Cost Metal Electrodes

Yan

Qiao

Ouyang

et al. 2020

Adv Elect Materials

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“…This has pushed the advance of Flexible Electronics, where the thin film is supported on cheap flexible substrates (e.g., polymers, paper, textile). [3][4][5] These substrates would also meet technological demands difficult to tackle by semiconductor substrates, such as their compatibility with rollto-roll processing and printing technologies, making real applications not possible before (e.g. smart skin, flexible displays, photovoltaic cells or eye-type imagers).…”

Section: Introductionmentioning

confidence: 99%

“…Nowadays, organic and amorphous metal oxide semiconductors are the most widely used materials in Flexible Electronics. [4,5] However, other active layers different from semiconductors are increasingly demanded before the need of enlarging the performance of the forthcoming flexible devices. [1,2,7] This shows as an opportunity for ferroelectric oxide thin films since their intrinsic multifunctionality (e.g., ferro-, pyro-, piezo-electric, multiferroic or photoferroic) would make possible multiple operations in the flexible device.…”

Section: Introductionmentioning

confidence: 99%

“…[37] In the context of the low-temperature CSD fabrication of metal oxide thin films, important efforts are being devoted nowadays to the processing of semiconductors, looking for their successful integration with flexible, large-area, low-cost electronics. [3][4][5] Thin-film transistors of amorphous binary oxides (e.g., ZnO or In 2 O 3 ) have been deposited directly on cheap, bendable substrates using temperatures around 250C and showing an electrical performance comparable to the dominant amorphous-silicon semiconductor. For more complex systems such as those based on ternary or quaternary amorphous oxides (e.g., In 2 O 3 -Ga 2 O 3 -ZnO), high carrier mobilities are also possible using low processing temperatures.…”

Section: Introductionmentioning

confidence: 99%

“…For more complex systems such as those based on ternary or quaternary amorphous oxides (e.g., In 2 O 3 -Ga 2 O 3 -ZnO), high carrier mobilities are also possible using low processing temperatures. [5,35,[77][78][79][80][81] During the last years, the group of Prof. Calzada (female) has carried out an ambitious investigation in the field of the low-temperature crystallization of ferroelectric oxide thin films by CSD methods. We have attained for these films the 400C integration barrier (Fig.…”

Section: Introductionmentioning

confidence: 99%

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Low-Temperature Solution Approaches for the Potential Integration of Ferroelectric Oxide Films in Flexible Electronics

Bretos

Jiménez

Ricote

et al. 2020

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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This Technical Review presents the state-of-the-art in low-temperature chemical solution deposition (CSD) processing of ferroelectric oxide thin films. To achieve the integration of multifunctional crystalline oxides with flexible and semiconductor devices is today crucial to meet the demands of coming electronic devices. Hence, amorphous metal oxide semiconductors have been recently introduced in thin film electronics. However, their benefits are limited compared to those of ferroelectric oxides, which intrinsic multifunctionality would make possible multiple operations in the device. But, ferroelectricity is linked to a non centrosymmetric crystal structure that is achieved, in general, at high temperatures, over 500C. These temperatures exceed the thermal stability of flexible polymer substrates and are not compatible with those permitted in the current fabrication routines of Si-based devices. In addition, the manufacturing of flexible electronic devices not only calls for low-temperature fabrication processes but also for deposition techniques that scale easily to the large areas required in flexible devices. In this regard, CSD processes are the best positioned today to integrate metal oxide thin-films with flexible substrates, as a large-area, low-cost, high-throughput fabrication technique. Here, we review the progress made in the last years in fabricating at low temperature crystalline ferroelectric oxide thin films via CSD methods, highlighting the recent work of our group in the preparation of ferroelectric oxide thin films on flexible polyimide substrates.

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